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Transistors / Power Field-Effect Transistors / STP6N62K3
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STP6N62K3 by:
STMicroelectronics

Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for STP6N62K3 by STMicroelectronics

Results Overview of STP6N62K3 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STP6N62K3 Information

STP6N62K3 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STP6N62K3

Part # Distributor Description Stock Price Buy
DISTI # 497-8450-5-ND
DigiKey MOSFET N-CH 620V 5.5A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube 53
In Stock
  • 1 $2.6800
  • 50 $1.3216
  • 100 $1.1893
  • 500 $0.9572
  • 1,000 $0.8825
  • 2,000 $0.8198
  • 5,000 $0.7865
$0.7865 / $2.6800 Buy Now
DISTI # STP6N62K3
Avnet Americas - Rail/Tube (Alt: STP6N62K3) COO: China RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.8026
  • 2,000 $0.7914
  • 4,000 $0.7768
  • 8,000 $0.7627
  • 16,000 $0.7546
$0.7546 / $0.8026 Buy Now
DISTI # 511-STP6N62K3
Mouser Electronics MOSFETs N-channel 620V 1.1 RoHS: Compliant 949
  • 1 $1.9500
  • 10 $0.8520
  • 100 $0.8310
  • 500 $0.8250
  • 1,000 $0.8190
  • 2,000 $0.7860
$0.7860 / $1.9500 Buy Now
STMicroelectronics N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in TO-220 package COO: China RoHS: Compliant Min Qty: 1 949
  • 1 $1.9100
  • 10 $0.8400
  • 100 $0.8100
  • 500 $0.8100
$0.8100 / $1.9100 Buy Now
Future Electronics N-Channel 620 V 1.2 Ohm SuperMESH3™ Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 13 Weeks Container: Tube 0
Tube
  • 50 $1.0100
  • 200 $0.9750
  • 1,000 $0.9450
  • 2,000 $0.9300
  • 6,250 $0.9000
$0.9000 / $1.0100 Buy Now
Bristol Electronics   Min Qty: 4 90
  • 4 $1.6596
  • 14 $1.2447
  • 42 $1.0373
$1.0373 / $1.6596 Buy Now
Bristol Electronics   50
RFQ
Quest Components   72
  • 1 $2.2128
  • 16 $1.3830
  • 55 $0.8298
$0.8298 / $2.2128 Buy Now
Quest Components   72
  • 1 $2.5920
  • 14 $1.6200
  • 47 $1.4256
$1.4256 / $2.5920 Buy Now
Quest Components   40
  • 1 $2.1600
  • 3 $1.6200
  • 16 $1.3500
$1.3500 / $2.1600 Buy Now
DISTI # STP6N62K3
TME Transistor: N-MOSFET, SuperMESH3™, unipolar, 620V, 3A, 30W, TO220-3 Min Qty: 1 0
  • 1 $1.8800
  • 50 $0.8300
  • 5,000 $0.7800
$0.7800 / $1.8800 RFQ
DISTI # STP6N62K3
Avnet Silica (Alt: STP6N62K3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days Silica - 5000
Buy Now
DISTI # STP6N62K3
EBV Elektronik (Alt: STP6N62K3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
Sense Electronic Company Limited TO-220 4100
RFQ

Part Details for STP6N62K3

STP6N62K3 CAD Models

  • Part Symbol

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  • Footprint

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  • 3D Model

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STP6N62K3 Part Data Attributes

Parametric Data
STP6N62K3 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP6N62K3 STMicroelectronics Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code TO-220AB
Pin Count 3
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Additional Feature Ultra Low-On Resistance
Avalanche Energy Rating (Eas) 140 Mj
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 620 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Peak Reflow Temperature (Cel) Not Specified
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount No
Terminal Finish Matte Tin (Sn)
Terminal Form Through-Hole
Terminal Position Single
Time@Peak Reflow Temperature-Max (s) Not Specified
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for STP6N62K3

This table gives cross-reference parts and alternative options found for STP6N62K3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP6N62K3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STP6LNC60 STMicroelectronics Check for Price 5.8A, 600V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STP6N62K3 vs STP6LNC60
R6006ANX ROHM Semiconductor Check for Price Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB STP6N62K3 vs R6006ANX
STU6N62K3 STMicroelectronics Check for Price Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 STP6N62K3 vs STU6N62K3
FMP05N60E Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 5.5A I(D), 600V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB STP6N62K3 vs FMP05N60E
STB6NK60Z STMicroelectronics Check for Price Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET STP6N62K3 vs STB6NK60Z
FMP06N60E Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB STP6N62K3 vs FMP06N60E
equivalents icon

STP6N62K3 Related Parts

STP6N62K3 Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the STP6N62K3 is 100 kHz, but it can be used up to 1 MHz with some limitations.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 600V. Additionally, a gate resistor (Rg) should be used to limit the gate current.

  • The maximum power dissipation of the STP6N62K3 is 150W, but this can be increased to 200W with proper heat sinking.

  • To protect the STP6N62K3 from overvoltage and overcurrent, use a voltage regulator to limit the voltage, and a current limiter or fuse to limit the current. Additionally, consider using a TVS diode or varistor to protect against voltage spikes.

  • The thermal resistance of the STP6N62K3 is 1.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient).

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