Part Details for STP6NB90 by STMicroelectronics
Results Overview of STP6NB90 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
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STP6NB90 Information
STP6NB90 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP6NB90
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Discontinued | 4551 |
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RFQ |
Part Details for STP6NB90
STP6NB90 CAD Models
STP6NB90 Part Data Attributes
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STP6NB90
STMicroelectronics
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Datasheet
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STP6NB90
STMicroelectronics
Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | High Voltage | |
| Avalanche Energy Rating (Eas) | 250 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 5.8 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 135 W | |
| Pulsed Drain Current-Max (IDM) | 23 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin Lead | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP6NB90
This table gives cross-reference parts and alternative options found for STP6NB90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP6NB90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK60Z | STMicroelectronics | $0.8939 | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP6NB90 vs STP4NK60Z |
| NDP706A | National Semiconductor Corporation | Check for Price | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | STP6NB90 vs NDP706A |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP6NB90 vs IRFS620 |
| IPD90N06S306ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | STP6NB90 vs IPD90N06S306ATMA1 |
| FQA30N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | STP6NB90 vs FQA30N40 |
| SSS7N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | STP6NB90 vs SSS7N60B |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP6NB90 vs FQA17N40 |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP6NB90 vs FDP6035L |
| FQP5N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP6NB90 vs FQP5N40 |
| SPP04N60C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP6NB90 vs SPP04N60C3 |
STP6NB90 Frequently Asked Questions (FAQ)
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The STP6NB90 can operate from -40°C to 150°C (TJ), but the maximum junction temperature (TJ) should not exceed 150°C for reliable operation.
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To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and ensure the drain-source voltage (VDS) is within the recommended range (typically 10-30 V).
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The recommended gate drive voltage for the STP6NB90 is between 10-15 V, with a maximum gate-source voltage (VGS) of ±20 V.
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Use a voltage regulator or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
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The maximum allowable power dissipation for the STP6NB90 is 125 W, but this value can be derated based on the operating temperature and other factors.