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Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP80NF10 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
72K6055
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Newark | Mosfet Transistor, N Channel, 80 A, 100 V, 0.012 Ohm, 10 V, 3 V Rohs Compliant: Yes |Stmicroelectronics STP80NF10 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 148 |
|
$1.4600 / $3.6600 | Buy Now |
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DISTI #
497-2642-5-ND
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DigiKey | MOSFET N-CH 100V 80A TO220AB Min Qty: 1 Lead time: 13 Weeks Container: Tube |
566 In Stock |
|
$1.4250 / $4.1500 | Buy Now |
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DISTI #
STP80NF10
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Avnet Americas | - Rail/Tube (Alt: STP80NF10) COO: Singapore RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Tube | 34 |
|
$1.3571 / $1.4430 | Buy Now |
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DISTI #
72K6055
|
Avnet Americas | - Bulk (Alt: 72K6055) COO: Singapore RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 148 Partner Stock |
|
$1.4100 / $3.5100 | Buy Now |
|
DISTI #
511-STP80NF10
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Mouser Electronics | MOSFETs N-Ch 100 Volt 80 Amp RoHS: Compliant | 897 |
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$1.4200 / $3.9500 | Buy Now |
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DISTI #
E02:0323_00209604
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Arrow Electronics | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube COO: Singapore RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2529 | Europe - 14976 |
|
$0.9522 / $3.7173 | Buy Now |
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DISTI #
V36:1790_06564898
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Arrow Electronics | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube COO: China RoHS: Exempt Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Date Code: 2347 | Americas - 7331 |
|
$1.3720 | Buy Now |
|
DISTI #
V99:2348_17709821
|
Arrow Electronics | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube COO: China RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2349 | Americas - 1000 |
|
$1.6310 | Buy Now |
|
|
STMicroelectronics | N-Channel 100V - 0.012Ohm - 80A - TO-220 LOW GATE CHARGE STripFET(TM) MOSFET COO: Singapore RoHS: Compliant Min Qty: 1 | 922 |
|
$1.5600 / $3.7500 | Buy Now |
|
|
Future Electronics | N-Channel 100 V 15 mOhm Flange Mount STripFET™ II Power MOSFET - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Container: Tube | 1400Tube |
|
$0.9800 / $1.1300 | Buy Now |
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STP80NF10
STMicroelectronics
Buy Now
Datasheet
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STP80NF10
STMicroelectronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 350 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STP80NF10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP80NF10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK60Z | STMicroelectronics | $0.8939 | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP80NF10 vs STP4NK60Z |
| NDP706A | National Semiconductor Corporation | Check for Price | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | STP80NF10 vs NDP706A |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP80NF10 vs IRFS620 |
| IPD90N06S306ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | STP80NF10 vs IPD90N06S306ATMA1 |
| FQA30N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | STP80NF10 vs FQA30N40 |
| SSS7N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | STP80NF10 vs SSS7N60B |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP80NF10 vs FQA17N40 |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP80NF10 vs FDP6035L |
| FQP5N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STP80NF10 vs FQP5N40 |
| SPP04N60C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP80NF10 vs SPP04N60C3 |
The maximum operating temperature range for the STP80NF10 is -55°C to 150°C.
To ensure reliability, it's essential to follow the recommended derating curves for voltage and current, and to ensure proper thermal management, such as using a heat sink or thermal interface material.
The maximum voltage rating for the STP80NF10 is 80V, but it's recommended to derate the voltage based on the operating temperature to ensure reliability.
To protect the STP80NF10 from ESD, it's essential to follow proper handling and storage procedures, such as using anti-static bags or trays, and ensuring that all personnel handling the device are grounded.
To minimize thermal resistance, it's recommended to use a PCB layout with a large copper area connected to the drain pin, and to use thermal vias to dissipate heat efficiently.