| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STD15NF10T4 | STMicroelectronics | $0.5568 | Power Field-Effect Transistor, 15A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | STP9NK60ZD vs STD15NF10T4 |
| IXTA80N10T | Littelfuse Inc | $2.3951 | Power Field-Effect Transistor, 80A I(D), 105V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP9NK60ZD vs IXTA80N10T |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP9NK60ZD vs IPB80N06S2LH5ATMA1 |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP9NK60ZD vs IRFS620 |
| NDP706A | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP9NK60ZD vs NDP706A |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP9NK60ZD vs FQA17N40 |
| SPP80N06S2L-06 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP9NK60ZD vs SPP80N06S2L-06 |
| APT50M75LLL | Microchip Technology Inc | Check for Price | Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | STP9NK60ZD vs APT50M75LLL |
| IXFH40N30Q | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | STP9NK60ZD vs IXFH40N30Q |
| NDB706BL | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP9NK60ZD vs NDB706BL |
Part Details for STP9NK60ZD by STMicroelectronics
Results Overview of STP9NK60ZD by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP9NK60ZD Information
STP9NK60ZD by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP9NK60ZD
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 7A I(D), 600V, 0.95OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 2 |
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$2.2425 / $2.4375 | Buy Now |
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Vyrian | Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 9344 |
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RFQ |
STP9NK60ZD Part Data Attributes
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STP9NK60ZD
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP9NK60ZD
STMicroelectronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1980-01-04 | |
| Avalanche Energy Rating (Eas) | 235 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.95 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP9NK60ZD
This table gives cross-reference parts and alternative options found for STP9NK60ZD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP9NK60ZD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STP9NK60ZD Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STP9NK60ZD is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings, as well as its thermal impedance and switching characteristics.
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To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 10-15V) and that the gate resistance is low (typically <10 ohms). Also, consider using a gate driver with a high current capability and a low output impedance to quickly charge and discharge the gate capacitance.
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For optimal thermal management, ensure that the device is mounted on a thermally conductive PCB material (e.g., FR4 or IMS) with a sufficient copper area for heat dissipation. Use a thermal pad or heat sink to further improve heat dissipation. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and capacitances.
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Use a voltage clamp or a zener diode to protect the device from overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Consider using a fuse or a PTC (positive temperature coefficient) thermistor to provide additional protection.
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Use a soldering iron with a temperature-controlled tip (max. 260°C) and a solder with a melting point above 220°C. Apply a small amount of solder paste to the PCB pads and use a reflow oven or a hot air gun to solder the device. Ensure that the device is properly aligned and seated on the PCB to prevent thermal and electrical stress.