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STS4DNFS30 by: STMicroelectronics

Power Field-Effect Transistor, 4.5A I(D), 30V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for STS4DNFS30 by STMicroelectronics

Results Overview of STS4DNFS30 by STMicroelectronics

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Applications Automotive

STS4DNFS30 Information

STS4DNFS30 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STS4DNFS30

Part # Distributor Description Stock Price Buy
DISTI # 497-6187-1-ND
DigiKey MOSFET N-CH 30V 4.5A 8SO Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Tape & Reel (TR) 1495
In Stock
  • 1 $2.2700
  • 10 $1.4550
  • 100 $0.9898
  • 500 $0.7906
  • 1,000 $0.7265
  • 2,500 $0.6572
  • 5,000 $0.6250
$0.6250 / $2.2700 Buy Now
Bristol Electronics   Min Qty: 4 2500
  • 4 $1.5000
  • 15 $0.9750
  • 53 $0.5625
  • 179 $0.4800
  • 387 $0.4200
  • 918 $0.3900
$0.3900 / $1.5000 Buy Now
Quest Components 4.5 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET 2000
  • 1 $2.0000
  • 334 $0.5200
  • 1,539 $0.5000
$0.5000 / $2.0000 Buy Now

Part Details for STS4DNFS30

STS4DNFS30 CAD Models

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STS4DNFS30 Part Data Attributes

STS4DNFS30 STMicroelectronics
Buy Now Datasheet
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STS4DNFS30 STMicroelectronics Power Field-Effect Transistor, 4.5A I(D), 30V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Obsolete
Part Package Code SOT
Package Description Sop-8
Pin Count 8
Reach Compliance Code Compliant
ECCN Code EAR99
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology Metal-Oxide Semiconductor
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 13 A
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Nickel Palladium Gold
Terminal Form Gull Wing
Terminal Position Dual
Transistor Application Switching
Transistor Element Material Silicon
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STS4DNFS30 Related Parts

STS4DNFS30 Frequently Asked Questions (FAQ)

  • STMicroelectronics recommends a thermal pad layout with a minimum of 2 oz copper thickness, and a thermal via array with a minimum of 10 vias under the package to ensure optimal thermal performance.

  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure proper airflow around the device. Additionally, consider using a heat sink or a thermal management system to keep the junction temperature within the recommended range.

  • Although the datasheet specifies the recommended operating conditions, it's essential to note that the maximum allowed voltage on the input pins is typically 5.5V, and exceeding this voltage may cause damage to the device.

  • To prevent ESD damage, it's crucial to follow proper handling and assembly procedures, such as using ESD-safe materials, grounding wrist straps, and ensuring that the device is stored in an ESD-protected environment.

  • STMicroelectronics recommends following the JEDEC J-STD-020D.1 standard for soldering conditions, which specifies a peak temperature of 260°C and a dwell time of 30 seconds.

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