Part Details for STS4DNFS30 by STMicroelectronics
Results Overview of STS4DNFS30 by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STS4DNFS30 Information
STS4DNFS30 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STS4DNFS30
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-6187-1-ND
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DigiKey | MOSFET N-CH 30V 4.5A 8SO Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Tape & Reel (TR) |
1495 In Stock |
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$0.6250 / $2.2700 | Buy Now |
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Bristol Electronics | Min Qty: 4 | 2500 |
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$0.3900 / $1.5000 | Buy Now |
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Quest Components | 4.5 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET | 2000 |
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$0.5000 / $2.0000 | Buy Now |
Part Details for STS4DNFS30
STS4DNFS30 CAD Models
STS4DNFS30 Part Data Attributes
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STS4DNFS30
STMicroelectronics
Buy Now
Datasheet
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STS4DNFS30
STMicroelectronics
Power Field-Effect Transistor, 4.5A I(D), 30V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SOT | |
| Package Description | Sop-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 13 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Nickel Palladium Gold | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STS4DNFS30 Frequently Asked Questions (FAQ)
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STMicroelectronics recommends a thermal pad layout with a minimum of 2 oz copper thickness, and a thermal via array with a minimum of 10 vias under the package to ensure optimal thermal performance.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure proper airflow around the device. Additionally, consider using a heat sink or a thermal management system to keep the junction temperature within the recommended range.
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Although the datasheet specifies the recommended operating conditions, it's essential to note that the maximum allowed voltage on the input pins is typically 5.5V, and exceeding this voltage may cause damage to the device.
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To prevent ESD damage, it's crucial to follow proper handling and assembly procedures, such as using ESD-safe materials, grounding wrist straps, and ensuring that the device is stored in an ESD-protected environment.
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STMicroelectronics recommends following the JEDEC J-STD-020D.1 standard for soldering conditions, which specifies a peak temperature of 260°C and a dwell time of 30 seconds.