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Part Details for STU3LN80K5 by STMicroelectronics
Results Overview of STU3LN80K5 by STMicroelectronics
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STU3LN80K5 Information
STU3LN80K5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STU3LN80K5
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-17295-ND
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DigiKey | MOSFET N-CHANNEL 800V 2A IPAK Min Qty: 1 Lead time: 14 Weeks Container: Tube |
2968 In Stock |
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$0.4380 / $1.7500 | Buy Now |
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DISTI #
STU3LN80K5
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Avnet Americas | - Rail/Tube (Alt: STU3LN80K5) COO: Italy RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
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$0.4380 / $0.5006 | Buy Now |
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DISTI #
511-STU3LN80K5
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Mouser Electronics | MOSFETs N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package RoHS: Compliant | 1550 |
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$0.4380 / $0.6300 | Buy Now |
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STMicroelectronics | N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package COO: Italy RoHS: Compliant Min Qty: 1 | 1550 |
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$0.4600 / $0.6200 | Buy Now |
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Future Electronics | N-Channel 800 V 3.5 Ohm Through Hole MDmesh K5 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Container: Tube | 0Tube |
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$0.5000 / $0.5200 | Buy Now |
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Future Electronics | N-Channel 800 V 3.5 Ohm Through Hole MDmesh K5 Power Mosfet - IPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks Container: Tube | 0Tube |
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$0.5000 / $0.5700 | Buy Now |
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DISTI #
STU3LN80K5
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Avnet Silica | (Alt: STU3LN80K5) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for STU3LN80K5
STU3LN80K5 CAD Models
STU3LN80K5 Part Data Attributes
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STU3LN80K5
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STU3LN80K5
STMicroelectronics
Power Field-Effect Transistor, 2A I(D), 800V, 3.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Ipak-3 | |
| Manufacturer Package Code | IPAK | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Avalanche Energy Rating (Eas) | 155 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 3.25 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 0.1 Pf | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STU3LN80K5 Frequently Asked Questions (FAQ)
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STMicroelectronics recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
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To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and consider derating the device's power dissipation according to the temperature range.
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To ensure EMI and EMC compliance, consider using a shielded layout, decoupling capacitors, and a common-mode choke. Additionally, follow the recommended PCB layout and component placement guidelines to minimize radiation and susceptibility.
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Select input and output capacitors with a suitable voltage rating, capacitance value, and ESR (Equivalent Series Resistance) to ensure stable operation and minimize ripple voltage. Consult the datasheet and application notes for specific recommendations.
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Increasing the switching frequency can improve efficiency, but it also increases switching losses and EMI radiation. A balance between efficiency and switching frequency must be found based on the specific application requirements.