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Part Details for STU5N60M2 by STMicroelectronics
Results Overview of STU5N60M2 by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STU5N60M2 Information
STU5N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STU5N60M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-14224-5-ND
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DigiKey | MOSFET N-CH 600V 3.7A IPAK Lead time: 18 Weeks Container: Tube |
831 In Stock |
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Buy Now | |
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DISTI #
STU5N60M2
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Avnet Americas | - Rail/Tube (Alt: STU5N60M2) COO: Singapore RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tube | 0 |
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RFQ | |
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DISTI #
STU5N60M2
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Avnet Americas | - Rail/Tube (Alt: STU5N60M2) COO: Singapore RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tube | 0 |
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RFQ | |
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STMicroelectronics | N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in IPAK package COO: China RoHS: Compliant Min Qty: 1 | 2700 |
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$0.5800 / $1.3100 | Buy Now |
Part Details for STU5N60M2
STU5N60M2 CAD Models
STU5N60M2 Part Data Attributes
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STU5N60M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STU5N60M2
STMicroelectronics
Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Ipak-3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Energy Rated | |
| Avalanche Energy Rating (Eas) | 80 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 0.75 Pf | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 85 Ns | |
| Turn-on Time-Max (ton) | 15 Ns |
Alternate Parts for STU5N60M2
This table gives cross-reference parts and alternative options found for STU5N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STU5N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP5N60M2 | STMicroelectronics | $1.0311 | Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STU5N60M2 vs STP5N60M2 |
| STD5N60M2 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STU5N60M2 vs STD5N60M2 |
| SPP03N60S5HKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STU5N60M2 vs SPP03N60S5HKSA1 |
STU5N60M2 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STU5N60M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the STU5N60M2, this region is typically bounded by the maximum drain-source voltage (Vds), maximum drain current (Id), and maximum junction temperature (Tj). Engineers can use simulation tools or consult with STMicroelectronics' application notes to determine the SOA for their specific application.
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To ensure the STU5N60M2 is properly biased for optimal performance, engineers should follow the recommended biasing conditions outlined in the datasheet. This includes setting the gate-source voltage (Vgs) within the recommended range, typically between 2V and 5V, and ensuring the drain-source voltage (Vds) is within the maximum rating. Additionally, engineers should consider the device's threshold voltage (Vth) and ensure the gate-source voltage is sufficient to fully turn on the device. Proper biasing is critical to achieve the desired performance, including low on-state resistance and high switching speeds.
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Thermal management is critical for the STU5N60M2, as excessive junction temperature (Tj) can lead to reduced performance, reliability, and lifespan. Engineers should consider the device's thermal resistance (Rthja) and ensure adequate heat sinking, such as using a heat sink or thermal interface material, to keep the junction temperature within the recommended range. Additionally, engineers should consider the device's power dissipation (Pd) and ensure it is within the maximum rating. Proper thermal management is essential to achieve reliable operation and prevent thermal runaway.
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Electrostatic discharge (ESD) can damage the STU5N60M2, so engineers should take precautions to prevent ESD events. This includes handling the device with anti-static wrist straps, mats, or bags, and ensuring the device is properly grounded during assembly and testing. Additionally, engineers can use ESD protection devices, such as TVS diodes or ESD protection arrays, to protect the device from ESD events. Proper ESD protection is essential to prevent damage and ensure reliable operation.
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Proper PCB layout is critical for the STU5N60M2 to ensure reliable operation and minimize parasitic effects. Engineers should consider the device's pinout and ensure proper routing of the drain, source, and gate pins. This includes minimizing the length and inductance of the drain and source traces, and ensuring the gate trace is properly terminated to prevent ringing. Additionally, engineers should consider the device's thermal management and ensure adequate heat sinking and thermal dissipation. Proper PCB layout is essential to achieve optimal performance and reliability.