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Transistors / Power Field-Effect Transistors / STW11NM80
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STW11NM80 by: STMicroelectronics

N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package

Part Details for STW11NM80 by STMicroelectronics

Overview of STW11NM80 by STMicroelectronics

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Price & Stock for STW11NM80

Part # Distributor Description Stock Price Buy
DISTI # 57P2583
Newark Hv Mosfet Mdmesh |Stmicroelectronics STW11NM80 Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-4420-5-ND
DigiKey MOSFET N-CH 800V 11A TO247-3 Min Qty: 1 Lead time: 16 Weeks Container: Tube 70
In Stock
  • 1 $5.6600
  • 30 $4.4837
  • 120 $3.8431
  • 510 $3.4161
  • 1,020 $2.9250
  • 2,010 $2.7542
$2.7542 / $5.6600 Buy Now
DISTI # STW11NM80
Avnet Americas Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $3.1391
  • 1,200 $3.0757
  • 2,400 $3.0123
  • 3,600 $2.9489
  • 4,800 $2.8855
  • 6,000 $2.8221
  • 60,000 $2.7586
$2.7586 / $3.1391 Buy Now
DISTI # 511-STW11NM80
Mouser Electronics MOSFET N-Ch 800 Volt 11 Amp Power MDmesh RoHS: Compliant 1082
  • 1 $5.6600
  • 10 $5.5100
  • 25 $4.4800
  • 100 $4.3700
  • 250 $3.4200
  • 600 $2.9200
  • 1,200 $2.7500
$2.7500 / $5.6600 Buy Now
STMicroelectronics N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package RoHS: Compliant Min Qty: 1 1082
  • 1 $5.5500
  • 10 $5.4000
  • 25 $4.3900
  • 100 $4.2800
  • 250 $3.3500
$3.3500 / $5.5500 Buy Now
Future Electronics N-Channel 800 V 0.4 Ohm Flange Mount MDmesh Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.9900
  • 90 $2.9100
  • 300 $2.8300
  • 600 $2.7900
  • 1,200 $2.7000
$2.7000 / $2.9900 Buy Now
Future Electronics N-Channel 800 V 0.4 Ohm Flange Mount MDmesh Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.9900
  • 90 $2.9100
  • 300 $2.8300
  • 600 $2.7900
  • 1,200 $2.7000
$2.7000 / $2.9900 Buy Now
Future Electronics N-Channel 800 V 0.4 Ohm Flange Mount MDmesh Power MosFet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 540 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $3.0100
  • 120 $2.9100
  • 450 $2.8300
  • 750 $2.8000
  • 1,500 $2.7000
$2.7000 / $3.0100 Buy Now
DISTI # STW11NM80
Avnet Americas Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $3.1391
  • 1,200 $3.0757
  • 2,400 $3.0123
  • 3,600 $2.9489
  • 4,800 $2.8855
  • 6,000 $2.8221
  • 60,000 $2.7586
$2.7586 / $3.1391 Buy Now
DISTI # STW11NM80
TME Transistor: N-MOSFET, unipolar, 800V, 8A, 150W, TO247 Min Qty: 1 30
  • 1 $3.8700
  • 3 $3.4800
  • 10 $3.0800
  • 30 $2.7700
$2.7700 / $3.8700 Buy Now
DISTI # STW11NM80
Avnet Silica Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # STW11NM80
EBV Elektronik Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube (Alt: STW11NM80) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for STW11NM80

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STW11NM80 Part Data Attributes:

Parametric Data
STW11NM80 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW11NM80 STMicroelectronics N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 400 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STW11NM80

This table gives cross-reference parts and alternative options found for STW11NM80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW11NM80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF610B_FP001 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation STW11NM80 vs IRF610B_FP001
FDP18N50 Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Fairchild Semiconductor Corporation STW11NM80 vs FDP18N50
PHD3055L 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 NXP Semiconductors STW11NM80 vs PHD3055L
STH8NA60 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics STW11NM80 vs STH8NA60
STD3NA50T4 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics STW11NM80 vs STD3NA50T4
IPP45N06S4L-08 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STW11NM80 vs IPP45N06S4L-08
934057024118 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 NXP Semiconductors STW11NM80 vs 934057024118
IRF620B Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation STW11NM80 vs IRF620B
SPP80N06S2L-06 Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG STW11NM80 vs SPP80N06S2L-06
STP75NF75 N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package STMicroelectronics STW11NM80 vs STP75NF75

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