Part Details for STW43NM60N by STMicroelectronics
Results Overview of STW43NM60N by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STW43NM60N Information
STW43NM60N by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STW43NM60N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 119 |
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RFQ | ||
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Quest Components | 95 |
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$7.3926 / $11.9880 | Buy Now | |
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ComSIT USA | N-CHANNEL 600 V-0.075 OHM-35 A-TO-247 SECOND GENERATION MDMESH POWER MOSFET Power Field-Effect Transistor, 35A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Vyrian | Discontinued | 7881 |
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RFQ |
Part Details for STW43NM60N
STW43NM60N CAD Models
STW43NM60N Part Data Attributes
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STW43NM60N
STMicroelectronics
Buy Now
Datasheet
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STW43NM60N
STMicroelectronics
Power Field-Effect Transistor, 35A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-247AC | |
| Package Description | Rohs Compliant, To-247, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.095 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 255 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STW43NM60N Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STW43NM60N is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
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The maximum current rating for the STW43NM60N is 43A, but it's essential to consider the device's thermal limitations and ensure proper cooling to prevent overheating.
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Yes, the STW43NM60N can be used in switching applications, but it's crucial to consider the device's switching characteristics, including the rise and fall times, to ensure reliable operation.
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To protect the STW43NM60N from ESD, it's essential to follow proper handling and storage procedures, including the use of ESD-safe materials, wrist straps, and mats.