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STW56N60DM2 by: STMicroelectronics

N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package

Part Details for STW56N60DM2 by STMicroelectronics

Results Overview of STW56N60DM2 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

STW56N60DM2 Information

STW56N60DM2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STW56N60DM2

Part # Distributor Description Stock Price Buy
DISTI # 79Y9481
Newark Mosfet, N-Ch, 600V, 50A, 150Deg C, 360W, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:50A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Stmicroelectronics STW56N60DM2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 66
  • 1 $12.3000
  • 10 $8.7000
  • 25 $8.5600
  • 60 $8.4300
  • 120 $8.2900
$8.2900 / $12.3000 Buy Now
DISTI # 79Y9481
Avnet Americas - Bulk (Alt: 79Y9481) COO: China RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 66 Partner Stock
  • 1 $13.6100
  • 10 $8.9500
  • 25 $8.5800
  • 60 $8.2000
  • 120 $7.8300
$7.8300 / $13.6100 Buy Now
DISTI # STW56N60DM2
Avnet Americas - Rail/Tube (Alt: STW56N60DM2) COO: Singapore RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube 0
  • 600 $5.5240
  • 1,200 $5.4864
  • 2,400 $5.4586
  • 3,600 $5.4307
  • 4,800 $5.4029
$5.4029 / $5.5240 Buy Now
STMicroelectronics N-channel 600 V, 52 mOhm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package COO: Singapore RoHS: Compliant Min Qty: 1 1153
  • 1 $10.0900
  • 10 $6.1200
  • 100 $5.4700
$5.4700 / $10.0900 Buy Now
DISTI # STW56N60DM2
TME Transistor: N-MOSFET, MDmesh™ DM2, unipolar, 600V, 31A, 360W, TO247 Min Qty: 1 0
  • 1 $10.8800
  • 5 $8.9500
  • 10 $7.7400
  • 30 $7.3100
$7.3100 / $10.8800 RFQ
ComSIT USA N-CHANNEL 600 V, 0.052 OHM TYP, 50 A MDMESH DM2 POWER MOSFET IN A TO-247 PACKAGE Power Field-Effect Transistor ECCN: EAR99 RoHS: Compliant Stock DE - 80
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # STW56N60DM2
Avnet Silica (Alt: STW56N60DM2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Silica - 2610
Buy Now
Chip Stock N-channel600V,0.052Ohmtyp.,50AMDmeshDM2PowerMOSFETinaTO-247package 3900
RFQ
DISTI # STW56N60DM2
EBV Elektronik (Alt: STW56N60DM2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 18 Weeks, 0 Days EBV - 990
Buy Now
LCSC 600V 50A 60m10V 360W 5V250uA 1 N-Channel TO-247 Single FETs MOSFETs RoHS 1
  • 1 $17.1537
  • 10 $16.9417
  • 30 $16.5744
  • 100 $16.2533
$16.2533 / $17.1537 Buy Now
Win Source Electronics Extremely high dv/dt ruggedness 2400
  • 3 $20.1994
  • 6 $18.8963
  • 9 $18.2447
  • 12 $16.9415
  • 16 $16.2899
  • 20 $15.6383
$15.6383 / $20.1994 Buy Now

Part Details for STW56N60DM2

STW56N60DM2 CAD Models

  • Part Symbol

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  • Footprint

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  • 3D Model

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STW56N60DM2 Part Data Attributes

Parametric Data
STW56N60DM2 STMicroelectronics
Buy Now Datasheet
Compare Parts:
STW56N60DM2 STMicroelectronics N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
JESD-609 Code e3
Terminal Finish Matte Tin (Sn)

Alternate Parts for STW56N60DM2

This table gives cross-reference parts and alternative options found for STW56N60DM2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STW56N60DM2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPW60R070C6FKSA1 Infineon Technologies AG $4.9014 Power Field-Effect Transistor, 53A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN STW56N60DM2 vs IPW60R070C6FKSA1
equivalents icon

STW56N60DM2 Related Parts

STW56N60DM2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the STW56N60DM2 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.

  • The recommended gate drive voltage for the STW56N60DM2 is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the STW56N60DM2 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive bag or container.

  • The maximum allowable current for the STW56N60DM2 is 56A, with a maximum pulsed current of 112A.

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