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N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STW75N60DM6 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-18315-ND
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DigiKey | MOSFET N-CH 600V 72A TO247 Min Qty: 1 Lead time: 16 Weeks Container: Tube |
184 In Stock |
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$6.3750 / $12.8300 | Buy Now |
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DISTI #
STW75N60DM6
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Avnet Americas | - Rail/Tube (Alt: STW75N60DM6) COO: Singapore RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$5.9364 / $6.1281 | Buy Now |
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DISTI #
STW75N60DM6
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Avnet Americas | - Rail/Tube (Alt: STW75N60DM6) COO: Singapore RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$5.9364 / $6.1281 | Buy Now |
|
DISTI #
511-STW75N60DM6
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Mouser Electronics | MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package RoHS: Compliant | 390 |
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$6.1200 / $7.7600 | Buy Now |
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DISTI #
V79:2366_27121592
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Arrow Electronics | Trans MOSFET N-CH 600V 72A 3-Pin(3+Tab) TO-247 Tube COO: China RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 2107 | Americas - 266 |
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$7.1490 | Buy Now |
|
|
STMicroelectronics | N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package COO: Singapore RoHS: Compliant Min Qty: 1 | 390 |
|
$6.3900 / $7.6100 | Buy Now |
|
DISTI #
66400412
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Verical | Trans MOSFET N-CH 600V 72A 3-Pin(3+Tab) TO-247 Tube RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 2107 | Americas - 266 |
|
$7.1490 | Buy Now |
|
DISTI #
V79:2366_27121592
|
Arrow Electronics | Trans MOSFET N-CH 600V 72A 3-Pin(3+Tab) TO-247 Tube COO: China RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 2107 | Americas - 266 |
|
$7.1490 | Buy Now |
|
DISTI #
66400412
|
Verical | Trans MOSFET N-CH 600V 72A 3-Pin(3+Tab) TO-247 Tube COO: China RoHS: Exempt Min Qty: 1 Package Multiple: 1 Date Code: 2107 | Americas - 266 |
|
$7.1490 | Buy Now |
|
DISTI #
STW75N60DM6
|
TME | Transistor: N-MOSFET, unipolar, 600V, 45A, Idm: 240A, 446W, TO247 Min Qty: 1 | 0 |
|
$10.0000 / $15.2600 | RFQ |
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STW75N60DM6
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STW75N60DM6
STMicroelectronics
N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| JESD-609 Code | e4 | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified |
The maximum safe operating area (SOA) for the STW75N60DM6 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
To ensure proper cooling, consider the device's thermal resistance (RthJA) and maximum junction temperature (Tj). Use a heat sink with a sufficient thermal conductivity, and ensure good thermal contact between the device and heat sink. You can also use thermal interface materials (TIMs) to reduce thermal resistance. Additionally, consider the airflow and ambient temperature in your design.
The recommended gate drive voltage for the STW75N60DM6 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to ensure the gate drive voltage is within the specified range to avoid damage to the device.
Yes, the STW75N60DM6 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, it's crucial to consider the device's switching losses, thermal performance, and layout parasitics to ensure reliable operation.
To protect the STW75N60DM6 from overvoltage and overcurrent conditions, consider using voltage clamping devices, such as TVS diodes or zener diodes, and current sensing resistors or fuses. You can also implement overvoltage and overcurrent protection circuits using dedicated ICs or microcontrollers.