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Rectifier Diode,

Part Details for TBAV99 by Galaxy Microelectronics

Overview of TBAV99 by Galaxy Microelectronics

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Applications Education and Research Consumer Electronics Environmental Monitoring Industrial Automation Audio and Video Systems Agriculture Technology Medical Imaging

Part Details for TBAV99

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TBAV99 Part Data Attributes

TBAV99 Galaxy Microelectronics
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TBAV99 Galaxy Microelectronics Rectifier Diode,
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Additional Feature HIGH RELIABILITY
Application FAST RECOVERY
Breakdown Voltage-Min 75 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G3
Non-rep Pk Forward Current-Max 2 A
Number of Elements 2
Number of Phases 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.215 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 0.35 W
Reference Standard AEC-Q101; MIL-STD-202
Rep Pk Reverse Voltage-Max 75 V
Reverse Current-Max 30 µA
Reverse Recovery Time-Max 0.004 µs
Reverse Test Voltage 25 V
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL

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