Part Details for TIS136 by Texas Instruments
Results Overview of TIS136 by Texas Instruments
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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TIS136 Information
TIS136 by Texas Instruments is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for TIS136
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon | 5517 |
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RFQ |
TIS136 Part Data Attributes
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TIS136
Texas Instruments
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Datasheet
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TIS136
Texas Instruments
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
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| Part Life Cycle Code | Obsolete | |
| ECCN Code | EAR99 | |
| Additional Feature | High Current Driver | |
| Collector Current-Max (IC) | 0.5 A | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | Single | |
| DC Current Gain-Min (hFE) | 20 | |
| JESD-30 Code | O-PBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Round | |
| Package Style | Cylindrical | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | Npn | |
| Power Dissipation-Max (Abs) | 0.7 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Wire | |
| Terminal Position | Bottom | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Transition Frequency-Nom (fT) | 250 Mhz | |
| Turn-off Time-Max (toff) | 60 Ns | |
| Turn-on Time-Max (ton) | 35 Ns |