Part Details for TPC8102 by Toshiba America Electronic Components
Overview of TPC8102 by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for TPC8102
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | 6 A, 30 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET | 15000 |
|
$0.3150 / $0.9000 | Buy Now |
|
|
Chip 1 Exchange | INSTOCK | 30000 |
|
RFQ |
Part Details for TPC8102
TPC8102 CAD Models
TPC8102 Part Data Attributes
|
|
TPC8102
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TPC8102
Toshiba America Electronic Components
TRANSISTOR 6 A, 30 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-6J1A, 8 PIN, FET General Purpose Power
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 47 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 2.4 W | |
| Power Dissipation-Max (Abs) | 2.4 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TPC8102
This table gives cross-reference parts and alternative options found for TPC8102. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TPC8102, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MMSF3P02HDR2 | 5.6A, 20V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SO-8 | Rochester Electronics LLC | TPC8102 vs MMSF3P02HDR2 |
| IRF7204 | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | TPC8102 vs IRF7204 |
| MMSF3P02HDR2 | 5.6A, 20V, 0.095ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | TPC8102 vs MMSF3P02HDR2 |
| IRF7204PBF | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | TPC8102 vs IRF7204PBF |