Datasheets
UF28100V by:

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8

Part Details for UF28100V by MACOM

Overview of UF28100V by MACOM

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Price & Stock for UF28100V

Part # Distributor Description Stock Price Buy
DISTI # 1465-UF28100V-ND
DigiKey RF MOSFET N-CHANNEL 28V 8L-FLG Min Qty: 25 Lead time: 20 Weeks Container: Bulk Temporarily Out of Stock
  • 25 $260.6136
$260.6136 Buy Now
DISTI # 937-UF28100V
Mouser Electronics RF MOSFET Transistors 100-500MHz 100Watts 28Volt 10dB RoHS: Compliant 0
  • 1 $278.2400
  • 10 $255.1500
  • 20 $255.1400
$255.1400 / $278.2400 Order Now

Part Details for UF28100V

UF28100V CAD Models

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UF28100V Part Data Attributes:

UF28100V MACOM
Buy Now Datasheet
Compare Parts:
UF28100V MACOM RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description FLANGE MOUNT, R-CDFM-F8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Samacsys Manufacturer MACOM
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 12 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 24 pF
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 250 W
Power Dissipation-Max (Abs) 250 W
Power Gain-Min (Gp) 10 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for UF28100V

This table gives cross-reference parts and alternative options found for UF28100V. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UF28100V, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
934006620112 TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors UF28100V vs 934006620112
MRF175GU 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN TE Connectivity UF28100V vs MRF175GU
MRF175GU 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC UF28100V vs MRF175GU
BLF246B,112 BLF246B NXP Semiconductors UF28100V vs BLF246B,112
MRF176GU 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN TE Connectivity UF28100V vs MRF176GU
MRF175LU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 333-04, 6 PIN TE Connectivity UF28100V vs MRF175LU
MRF275G 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN Motorola Mobility LLC UF28100V vs MRF275G
MRF275L UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 333-04, 6 PIN Motorola Mobility LLC UF28100V vs MRF275L
MRF175LU UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 333-04, 4 PIN Motorola Mobility LLC UF28100V vs MRF175LU
MRF275L UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 333-04, 6 PIN TE Connectivity UF28100V vs MRF275L

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