Datasheets
UPD44324185F5-E50-EQ2-A by:

2MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165

Part Details for UPD44324185F5-E50-EQ2-A by Renesas Electronics Corporation

Overview of UPD44324185F5-E50-EQ2-A by Renesas Electronics Corporation

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for UPD44324185F5-E50-EQ2-A

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UPD44324185F5-E50-EQ2-A Part Data Attributes:

UPD44324185F5-E50-EQ2-A Renesas Electronics Corporation
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UPD44324185F5-E50-EQ2-A Renesas Electronics Corporation 2MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code BGA
Package Description LBGA, BGA165,11X15,40
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 200 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 15 mm
Memory Density 37748736 bit
Memory IC Type DDR SRAM
Memory Width 18
Number of Functions 1
Number of Terminals 165
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Seated Height-Max 1.51 mm
Standby Current-Max 0.4 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.75 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 13 mm

Alternate Parts for UPD44324185F5-E50-EQ2-A

This table gives cross-reference parts and alternative options found for UPD44324185F5-E50-EQ2-A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD44324185F5-E50-EQ2-A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1423AV18-200BZXC DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor UPD44324185F5-E50-EQ2-A vs CY7C1423AV18-200BZXC
GS8342S18AGE-250IT DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 GSI Technology UPD44324185F5-E50-EQ2-A vs GS8342S18AGE-250IT
CY7C1423AV18-250BZXI DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor UPD44324185F5-E50-EQ2-A vs CY7C1423AV18-250BZXI
UPD44324185F5-E40Y-EQ2-A DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165 NEC Electronics Group UPD44324185F5-E50-EQ2-A vs UPD44324185F5-E40Y-EQ2-A
UPD44324185F5-E50Y-EQ2-A 2MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165 Renesas Electronics Corporation UPD44324185F5-E50-EQ2-A vs UPD44324185F5-E50Y-EQ2-A
CY7C1423BV18-250BZXC DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor UPD44324185F5-E50-EQ2-A vs CY7C1423BV18-250BZXC
GS8342S18AE-250I DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 GSI Technology UPD44324185F5-E50-EQ2-A vs GS8342S18AE-250I
UPD44324185F5-E40-EQ2 DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165 NEC Electronics Group UPD44324185F5-E50-EQ2-A vs UPD44324185F5-E40-EQ2
GS8342S18AGE-200T DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 GSI Technology UPD44324185F5-E50-EQ2-A vs GS8342S18AGE-200T
GS8342S18AE-200I DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 GSI Technology UPD44324185F5-E50-EQ2-A vs GS8342S18AE-200I
Part Number Description Manufacturer Compare
CY7C1423BV18-250BZI DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor UPD44324185F5-E50-EQ2-A vs CY7C1423BV18-250BZI
K7J321882M-FC25 DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor UPD44324185F5-E50-EQ2-A vs K7J321882M-FC25
GS8342S18AE-250 DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 GSI Technology UPD44324185F5-E50-EQ2-A vs GS8342S18AE-250
GS8342S18AGE-200T DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 GSI Technology UPD44324185F5-E50-EQ2-A vs GS8342S18AGE-200T
K7J321882M-FC20 DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor UPD44324185F5-E50-EQ2-A vs K7J321882M-FC20
CY7C1423BV18-200BZI DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor UPD44324185F5-E50-EQ2-A vs CY7C1423BV18-200BZI
UPD44324185F5-E40Y-EQ2-A 2MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165 Renesas Electronics Corporation UPD44324185F5-E50-EQ2-A vs UPD44324185F5-E40Y-EQ2-A
GS8342S18AE-200 DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 GSI Technology UPD44324185F5-E50-EQ2-A vs GS8342S18AE-200
GS8342S18AE-200IT DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, MO-216CAB-1, FPBGA-165 GSI Technology UPD44324185F5-E50-EQ2-A vs GS8342S18AE-200IT
CY7C1423AV18-200BZXC DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor UPD44324185F5-E50-EQ2-A vs CY7C1423AV18-200BZXC

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