Datasheets
UPD44644362AF5-E33-FQ1-A by: Renesas Electronics Corporation

2MX36 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165

Part Details for UPD44644362AF5-E33-FQ1-A by Renesas Electronics Corporation

Overview of UPD44644362AF5-E33-FQ1-A by Renesas Electronics Corporation

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Part Details for UPD44644362AF5-E33-FQ1-A

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UPD44644362AF5-E33-FQ1-A Part Data Attributes

UPD44644362AF5-E33-FQ1-A Renesas Electronics Corporation
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UPD44644362AF5-E33-FQ1-A Renesas Electronics Corporation 2MX36 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code BGA
Package Description 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Clock Frequency-Max (fCLK) 300 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
Length 17 mm
Memory Density 75497472 bit
Memory IC Type DDR SRAM
Memory Width 36
Number of Functions 1
Number of Terminals 165
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Seated Height-Max 1.46 mm
Standby Voltage-Min 1.7 V
Supply Current-Max 0.64 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology MOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 15 mm

Alternate Parts for UPD44644362AF5-E33-FQ1-A

This table gives cross-reference parts and alternative options found for UPD44644362AF5-E33-FQ1-A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD44644362AF5-E33-FQ1-A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
GS8662R36BGD-300T Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology UPD44644362AF5-E33-FQ1-A vs GS8662R36BGD-300T
K7I643682M-FC30T Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165 Samsung Semiconductor UPD44644362AF5-E33-FQ1-A vs K7I643682M-FC30T
GS8672T36BE-300 DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology UPD44644362AF5-E33-FQ1-A vs GS8672T36BE-300
CY7C1520KV18-300BZC DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor UPD44644362AF5-E33-FQ1-A vs CY7C1520KV18-300BZC
K7I643682M-EC30T Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165 Samsung Semiconductor UPD44644362AF5-E33-FQ1-A vs K7I643682M-EC30T
CY7C1520KV18-300BZXC DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor UPD44644362AF5-E33-FQ1-A vs CY7C1520KV18-300BZXC
CY7C1570V18-300BZXC DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor UPD44644362AF5-E33-FQ1-A vs CY7C1570V18-300BZXC
CY7C1520AV18-300BZXC DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor UPD44644362AF5-E33-FQ1-A vs CY7C1520AV18-300BZXC
CY7C1520V18-300BZC DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor UPD44644362AF5-E33-FQ1-A vs CY7C1520V18-300BZC
GS8662R36BD-300 Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology UPD44644362AF5-E33-FQ1-A vs GS8662R36BD-300
Part Number Description Manufacturer Compare
GS8672T37AGE-300T DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology UPD44644362AF5-E33-FQ1-A vs GS8672T37AGE-300T
GS81302T37E-400T DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology UPD44644362AF5-E33-FQ1-A vs GS81302T37E-400T
IS61DDP2B22M36A-500M3L DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 Integrated Silicon Solution Inc UPD44644362AF5-E33-FQ1-A vs IS61DDP2B22M36A-500M3L
CY7C1521V18-300BZI DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor UPD44644362AF5-E33-FQ1-A vs CY7C1521V18-300BZI
GS8672T38BGE-400IT Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology UPD44644362AF5-E33-FQ1-A vs GS8672T38BGE-400IT
CY7C1545V18-300BZXI QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor UPD44644362AF5-E33-FQ1-A vs CY7C1545V18-300BZXI
GS8672Q38BE-450T QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology UPD44644362AF5-E33-FQ1-A vs GS8672Q38BE-450T
GS8672D38AE-550I Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology UPD44644362AF5-E33-FQ1-A vs GS8672D38AE-550I
K7I643682M-EI200 DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor UPD44644362AF5-E33-FQ1-A vs K7I643682M-EI200
GS8672D36AE-333IT DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology UPD44644362AF5-E33-FQ1-A vs GS8672D36AE-333IT

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