VHB10-12S
Advanced Semiconductor Inc
Description: RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4

Overview of VHB10-12S by Advanced Semiconductor Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
10106268-6003A01LF Amphenol Communications Solutions PwrBlade+®,Power Connectors, Vertical, Receptacle, 12S 6HDP
10106266-0003001LF Amphenol Communications Solutions PwrBlade+®,Power Connectors, Vertical, Header, 12S
10106269-6003002LF Amphenol Communications Solutions PwrBlade+®,Power Connectors, Vertical, Receptacle, 12S 6HDP

CAD Models for VHB10-12S by Advanced Semiconductor Inc
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Part Data Attributes for VHB10-12S by Advanced Semiconductor Inc

VHB10-12S
Advanced Semiconductor Inc
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
ASI SEMICONDUCTOR INC
Package Description
POST/STUD MOUNT, O-CRPM-F4
Pin Count
4
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
EMITTER
Collector Current-Max (IC)
2 A
Collector-Base Capacitance-Max
45 pF
Collector-Emitter Voltage-Max
18 V
Configuration
SINGLE
DC Current Gain-Min (hFE)
5
Highest Frequency Band
VERY HIGH FREQUENCY BAND
JESD-30 Code
O-CRPM-F4
Number of Elements
1
Number of Terminals
4
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
ROUND
Package Style
POST/STUD MOUNT
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
20 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
FLAT
Terminal Position
RADIAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Want to compare parts?
  1. VHB10-12S
    Advanced Semiconductor Inc
    RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4
    VS

Alternate Parts for VHB10-12S

This table gives cross-reference parts and alternative options found for VHB10-12S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VHB10-12S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MRF2628 VHF BAND, Si, NPN, RF POWER TRANSISTOR, CASE 244-04, 4 PIN Motorola Mobility LLC VHB10-12S vs MRF2628
MRF2628 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, CASE 244-04, 4 PIN Motorola Semiconductor Products VHB10-12S vs MRF2628
Part Number Description Manufacturer Compare
BLW34 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-122A, 4 PIN, BIP RF Power NXP Semiconductors VHB10-12S vs BLW34
SD1480 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc VHB10-12S vs SD1480
933582620112 TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC PACKAGE-8, BIP RF Power NXP Semiconductors VHB10-12S vs 933582620112
VHB80-12 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc VHB10-12S vs VHB80-12
MS1579 RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, 0.320 X 0.250 INCH, PLASTIC, M156, 4 PIN Microsemi Corporation VHB10-12S vs MS1579
MS1337 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN Microchip Technology Inc VHB10-12S vs MS1337
MRF654 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc VHB10-12S vs MRF654
TPV385 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc VHB10-12S vs TPV385
SD4013 UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.500 INCH, PLASTIC, M111, 6 PIN STMicroelectronics VHB10-12S vs SD4013
VHB25-28S RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4 Advanced Semiconductor Inc VHB10-12S vs VHB25-28S

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