Datasheets
VHB25-28F by: Advanced Semiconductor Inc

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4

Part Details for VHB25-28F by Advanced Semiconductor Inc

Overview of VHB25-28F by Advanced Semiconductor Inc

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for VHB25-28F

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VHB25-28F Part Data Attributes

VHB25-28F Advanced Semiconductor Inc
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VHB25-28F Advanced Semiconductor Inc RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, O-CRFM-F4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection EMITTER
Collector Current-Max (IC) 4 A
Collector-Base Capacitance-Max 250 pF
Collector-Emitter Voltage-Max 35 V
Configuration SINGLE
DC Current Gain-Min (hFE) 5
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 40 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz

Alternate Parts for VHB25-28F

This table gives cross-reference parts and alternative options found for VHB25-28F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VHB25-28F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF314 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, CASE 211-07, 4 PIN MACOM VHB25-28F vs MRF314
Part Number Description Manufacturer Compare
BLW34 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-122A, 4 PIN, BIP RF Power NXP Semiconductors VHB25-28F vs BLW34
SD1480 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc VHB25-28F vs SD1480
933582620112 TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC PACKAGE-8, BIP RF Power NXP Semiconductors VHB25-28F vs 933582620112
VHB80-12 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc VHB25-28F vs VHB80-12
MS1579 RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, 0.320 X 0.250 INCH, PLASTIC, M156, 4 PIN Microsemi Corporation VHB25-28F vs MS1579
MS1337 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN Microchip Technology Inc VHB25-28F vs MS1337
MRF654 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc VHB25-28F vs MRF654
TPV385 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc VHB25-28F vs TPV385
SD4013 UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.500 INCH, PLASTIC, M111, 6 PIN STMicroelectronics VHB25-28F vs SD4013
VHB25-28S RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4 Advanced Semiconductor Inc VHB25-28F vs VHB25-28S

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