Part Details for VQ1000N6 by Supertex Inc
Overview of VQ1000N6 by Supertex Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Automotive
Robotics and Drones
Part Details for VQ1000N6
VQ1000N6 CAD Models
VQ1000N6 Part Data Attributes
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VQ1000N6
Supertex Inc
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Datasheet
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VQ1000N6
Supertex Inc
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SUPERTEX INC | |
| Part Package Code | DIP | |
| Package Description | IN-LINE, R-PDIP-T14 | |
| Pin Count | 14 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.225 A | |
| Drain-source On Resistance-Max | 5.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-PDIP-T14 | |
| JESD-609 Code | e0 | |
| Number of Elements | 4 | |
| Number of Terminals | 14 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 1 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 10 ns | |
| Turn-on Time-Max (ton) | 10 ns |
Alternate Parts for VQ1000N6
This table gives cross-reference parts and alternative options found for VQ1000N6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VQ1000N6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| VQ1000P | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | VQ1000N6 vs VQ1000P |
| ZVN2106E | 0.45A, 60V, 2ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 | Diodes Incorporated | VQ1000N6 vs ZVN2106E |
| VQ1000N7 | Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, DIP-14 | Supertex Inc | VQ1000N6 vs VQ1000N7 |
| VQ1000J | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | VQ1000N6 vs VQ1000J |
| ZVN4206E | Power Field-Effect Transistor, 0.6A I(D), 60V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | Zetex / Diodes Inc | VQ1000N6 vs ZVN4206E |
| VQ1000CP | Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-4 | Calogic Inc | VQ1000N6 vs VQ1000CP |
| VN3205P-G | Power Field-Effect Transistor, 1.5A I(D), 50V, 0.3ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-001, GREEN, MS-001AA, 14 PIN | Supertex Inc | VQ1000N6 vs VN3205P-G |
| ZVN4206E | 0.6A, 60V, 1.5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 | Diodes Incorporated | VQ1000N6 vs ZVN4206E |
| RBVQ1001P | Power Field-Effect Transistor, 0.85A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Supertex Inc | VQ1000N6 vs RBVQ1001P |
| VQ1004P | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-14 | Vishay Intertechnologies | VQ1000N6 vs VQ1004P |