Part Details for VQ1000P by Vishay Siliconix
Overview of VQ1000P by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for VQ1000P
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | N-CHANNEL 60-V (D-S) MOSFET Power Field-Effect Transistor, 0.025A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 25 |
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ES Components | SILICONIX VQ1000P | 66 in Stock |
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RFQ |
Part Details for VQ1000P
VQ1000P CAD Models
VQ1000P Part Data Attributes:
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VQ1000P
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
VQ1000P
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | DIP | |
| Package Description | IN-LINE, R-CDIP-T14 | |
| Pin Count | 14 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.225 A | |
| Drain-source On Resistance-Max | 5.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-CDIP-T14 | |
| Number of Elements | 4 | |
| Number of Terminals | 14 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 1 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 10 ns | |
| Turn-on Time-Max (ton) | 10 ns |
Alternate Parts for VQ1000P
This table gives cross-reference parts and alternative options found for VQ1000P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VQ1000P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| VQ1004P | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | VQ1000P vs VQ1004P |
| VQ1001P | Power Field-Effect Transistor, 0.85A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14 | Supertex Inc | VQ1000P vs VQ1001P |
| ZVN4206E | 0.6A, 60V, 1.5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 | Diodes Incorporated | VQ1000P vs ZVN4206E |
| VN3205P-G | Power Field-Effect Transistor, 1.5A I(D), 50V, 0.3ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-001, GREEN, MS-001AA, 14 PIN | Supertex Inc | VQ1000P vs VN3205P-G |
| ZVN2106E | Power Field-Effect Transistor, 0.45A I(D), 60V, 2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | Zetex / Diodes Inc | VQ1000P vs ZVN2106E |
| VQ1004P | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-14 | Vishay Intertechnologies | VQ1000P vs VQ1004P |
| RBVQ1001P | Power Field-Effect Transistor, 0.85A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Supertex Inc | VQ1000P vs RBVQ1001P |
| VQ1000N6 | Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | Supertex Inc | VQ1000P vs VQ1000N6 |
| VQ1001P | Power Field-Effect Transistor, 0.53A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Temic Semiconductors | VQ1000P vs VQ1001P |
| ZVN3306E | 0.27A, 60V, 5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 | Diodes Incorporated | VQ1000P vs ZVN3306E |