Part Details for AFV121KGSR5 by NXP Semiconductors
Overview of AFV121KGSR5 by NXP Semiconductors
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for AFV121KGSR5
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
60Y1462
|
Newark | Airfast Rf Power Ldmos Transistor, 1000 W Peak, 960-1215 Mhz, 50 V/ Reel Rohs Compliant: Yes |Nxp AFV121KGSR5 Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$542.5300 | Buy Now |
DISTI #
AFV121KGSR5-ND
|
DigiKey | RF MOSFET LDMOS 50V NI1230 Min Qty: 50 Lead time: 10 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$535.4014 | Buy Now |
DISTI #
AFV121KGSR5
|
Avnet Americas | BROADBAND RF POWER LDMOS TRANSISTOR 960-1215 MHZ 1000 W PE - Tape and Reel (Alt: AFV121KGSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$513.5349 / $592.2216 | Buy Now |
DISTI #
841-AFV121KGSR5
|
Mouser Electronics | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V RoHS: Compliant | 0 |
|
$529.7800 | Order Now |
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Reel | 0Reel |
|
$505.0500 | Buy Now |
DISTI #
AFV121KGSR5
|
Avnet Americas | BROADBAND RF POWER LDMOS TRANSISTOR 960-1215 MHZ 1000 W PE - Tape and Reel (Alt: AFV121KGSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$513.5349 / $592.2216 | Buy Now |
DISTI #
AFV121KGSR5
|
Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 50 | 0 |
|
$527.3700 | Buy Now |
DISTI #
AFV121KGSR5
|
EBV Elektronik | BROADBAND RF POWER LDMOS TRANSISTOR 960-1215 MHZ 1000 W PE (Alt: AFV121KGSR5) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 1 Weeks, 5 Days | EBV - 0 |
|
Buy Now |
Part Details for AFV121KGSR5
AFV121KGSR5 CAD Models
AFV121KGSR5 Part Data Attributes:
|
AFV121KGSR5
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
AFV121KGSR5
NXP Semiconductors
RF SMALL SIGNAL, FET
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | NXP | |
Case Connection | SOURCE | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 112 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 2.5 pF | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-CDFM-G4 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 225 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 18.5 dB | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |