Part Details for AON6362 by Alpha & Omega Semiconductor
Overview of AON6362 by Alpha & Omega Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AON6362
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V36:1790_07841818
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Arrow Electronics | Trans MOSFET N-CH 30V 27A 8-Pin DFN EP T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Date Code: 2223 | Americas - 30000 |
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$0.2432 / $0.2560 | Buy Now |
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DISTI #
AON6362
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TME | Transistor: N-MOSFET, unipolar, 30V, 39A, 13W, DFN5x6 Min Qty: 1 | 1511 |
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$0.2410 / $0.7610 | Buy Now |
Part Details for AON6362
AON6362 CAD Models
AON6362 Part Data Attributes:
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AON6362
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AON6362
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 60A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
| Package Description | DFN-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Alpha & Omega Semiconductors | |
| Avalanche Energy Rating (Eas) | 7 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0086 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AON6362
This table gives cross-reference parts and alternative options found for AON6362. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AON6362, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDB7030BL | N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ, 800-REEL | onsemi | AON6362 vs FDB7030BL |
| IRF3707Z | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | AON6362 vs IRF3707Z |
| FDB6670SS62Z | Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | AON6362 vs FDB6670SS62Z |
| FDB6670SL86Z | Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | AON6362 vs FDB6670SL86Z |
| IRF3707PBF | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | AON6362 vs IRF3707PBF |
| IRF3707SPBF | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | AON6362 vs IRF3707SPBF |
| IRLB8721PBF | Power Field-Effect Transistor, 62A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | AON6362 vs IRLB8721PBF |
| IRL3103LPBF | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | International Rectifier | AON6362 vs IRL3103LPBF |
| IRF3707 | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | AON6362 vs IRF3707 |
| IRF3707ZS | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Infineon Technologies AG | AON6362 vs IRF3707ZS |