Part Details for AOTF8N80 by Alpha & Omega Semiconductor
Overview of AOTF8N80 by Alpha & Omega Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AOTF8N80
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
785-1441-5-ND
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DigiKey | MOSFET N-CH 800V 7.4A TO220-3F Min Qty: 1000 Lead time: 16 Weeks Container: Tube | Limited Supply - Call |
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$0.9346 | Buy Now |
Part Details for AOTF8N80
AOTF8N80 CAD Models
AOTF8N80 Part Data Attributes:
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AOTF8N80
Alpha & Omega Semiconductor
Buy Now
Datasheet
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Compare Parts:
AOTF8N80
Alpha & Omega Semiconductor
Power Field-Effect Transistor, 7.4A I(D), 800V, 1.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ALPHA & OMEGA SEMICONDUCTOR LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 433 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 7.4 A | |
Drain-source On Resistance-Max | 1.63 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 26 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AOTF8N80
This table gives cross-reference parts and alternative options found for AOTF8N80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AOTF8N80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQP7N80_NL | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | AOTF8N80 vs FQP7N80_NL |
7N75L-TA3-T | Power Field-Effect Transistor, 7A I(D), 750V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | AOTF8N80 vs 7N75L-TA3-T |
STW8NC80Z | 6.7A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | STMicroelectronics | AOTF8N80 vs STW8NC80Z |
FQA7N80_F109 | Power Field-Effect Transistor, 7.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | AOTF8N80 vs FQA7N80_F109 |
FQP7N80J69Z | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | AOTF8N80 vs FQP7N80J69Z |
AOK8N80 | Power Field-Effect Transistor, 7.4A I(D), 800V, 1.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Alpha & Omega Semiconductor | AOTF8N80 vs AOK8N80 |
AOT8N80L | Power Field-Effect Transistor, 7.4A I(D), 800V, 1.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 | Alpha & Omega Semiconductor | AOTF8N80 vs AOT8N80L |
STB7NC80Z-1 | 6.5A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TABLESS TO-220, I2PAK-3 | STMicroelectronics | AOTF8N80 vs STB7NC80Z-1 |
STB7NC80ZT4 | 6.5A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | AOTF8N80 vs STB7NC80ZT4 |
AOK8N80L | Power Field-Effect Transistor, 7.4A I(D), 800V, 1.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Alpha & Omega Semiconductor | AOTF8N80 vs AOK8N80L |