Part Details for APT1001R1BN by Microsemi Corporation
Overview of APT1001R1BN by Microsemi Corporation
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for APT1001R1BN
APT1001R1BN CAD Models
APT1001R1BN Part Data Attributes
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APT1001R1BN
Microsemi Corporation
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Datasheet
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APT1001R1BN
Microsemi Corporation
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ADVANCED POWER TECHNOLOGY INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Microsemi Corporation | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 10.5 A | |
Drain-source On Resistance-Max | 1.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 160 pF | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 310 W | |
Power Dissipation-Max (Abs) | 310 W | |
Pulsed Drain Current-Max (IDM) | 42 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 143 ns | |
Turn-on Time-Max (ton) | 62 ns |
Alternate Parts for APT1001R1BN
This table gives cross-reference parts and alternative options found for APT1001R1BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT1001R1BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT1001R1BN | Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | APT1001R1BN vs APT1001R1BN |
APT1001R1BNR-GULLWING | Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN | Advanced Power Technology | APT1001R1BN vs APT1001R1BNR-GULLWING |
APT1001R1BNR-BUTT | 10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Microsemi Corporation | APT1001R1BN vs APT1001R1BNR-BUTT |
APT1001R1BN-BUTT | Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Advanced Power Technology | APT1001R1BN vs APT1001R1BN-BUTT |
APT1001R1BN-BUTT | 10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Microsemi Corporation | APT1001R1BN vs APT1001R1BN-BUTT |