Parametric results for: APT1001R1BN under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

1210.0 mJ 5

13 hits Apply

DRAIN 11

13 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 11

13 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 11

13 hits Apply

Drain Current-Max (ID) (1)

10.5 A 12

13 hits Apply

Drain-source On Resistance-Max (1)

1.1 Ω 11

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

13 hits Apply

160 pF 6 190 pF 5

Min (pF) - Max (pF)

13 hits Apply

TO-247 4 TO-247AD 3

13 hits Apply

R-PSFM-G3 4 R-PSFM-T3 7

13 hits Apply

e0 3

13 hits Apply

Manufacturer (3)

Advanced Power Technology 6 Microchip Technology Inc 1 Microsemi Corporation 6

13 hits Apply

1 2

13 hits Apply

Number of Elements (1)

1 12

13 hits Apply

Number of Terminals (1)

3 11

13 hits Apply

ENHANCEMENT MODE 12

13 hits Apply

150.0 °C 12

13 hits Apply

PLASTIC/EPOXY 11

13 hits Apply

RECTANGULAR 11

13 hits Apply

FLANGE MOUNT 11

13 hits Apply

Active 1 Obsolete 12

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

13 hits Apply

310 W 11

13 hits Apply

310 W 4

13 hits Apply

Surface Mount (2)

NO 8 YES 4

13 hits Apply