Part Details for APT38N60BC6 by Microchip Technology Inc
Overview of APT38N60BC6 by Microchip Technology Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for APT38N60BC6
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
78AH5921
|
Newark | Mosfet Coolmos 600 V 38 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT38N60BC6 Min Qty: 90 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$5.2700 / $6.5000 | Buy Now |
|
DISTI #
APT38N60BC6-ND
|
DigiKey | MOSFET N-CH 600V 38A TO247 Min Qty: 90 Lead time: 43 Weeks Container: Tube | Temporarily Out of Stock |
|
$6.5000 | Buy Now |
|
DISTI #
APT38N60BC6
|
Avnet Americas | Trans MOSFET N-CH 600V 38A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT38N60BC6) RoHS: Not Compliant Min Qty: 90 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube | 0 |
|
$5.2700 / $6.5000 | Buy Now |
|
DISTI #
494-APT38N60BC6
|
Mouser Electronics | MOSFET MOSFET COOLMOS 600 V 38 A TO-247 RoHS: Compliant | 41 |
|
$5.6100 / $6.5000 | Buy Now |
|
DISTI #
APT38N60BC6
|
Microchip Technology Inc | MOSFET SUPERJUNCTION 600 V 38 A TO-247, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
|
$4.9700 / $6.5000 | Buy Now |
|
|
Future Electronics | APT38N60 Series 600 V 38 A 99 mOhm 112 nC 278 W Mosfet To-247-3 RoHS: Compliant pbFree: Yes Min Qty: 72 Package Multiple: 1 Container: Bulk | 0Bulk |
|
$5.5000 / $5.7400 | Buy Now |
|
|
Onlinecomponents.com | 74 Factory Stock |
|
$5.0100 / $6.3900 | Buy Now | |
|
DISTI #
APT38N60BC6
|
Avnet Americas | Trans MOSFET N-CH 600V 38A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT38N60BC6) RoHS: Not Compliant Min Qty: 90 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube | 0 |
|
$5.2700 / $6.5000 | Buy Now |
|
DISTI #
APT38N60BC6
|
TME | Transistor: N-MOSFET, unipolar, 600V, 24A, Idm: 112A, 278W, TO247-3 Min Qty: 1 | 0 |
|
$7.4700 / $9.3900 | RFQ |
|
DISTI #
APT38N60BC6
|
Avnet Americas | Trans MOSFET N-CH 600V 38A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT38N60BC6) RoHS: Not Compliant Min Qty: 90 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube | 0 |
|
$5.2700 / $6.5000 | Buy Now |
Part Details for APT38N60BC6
APT38N60BC6 CAD Models
APT38N60BC6 Part Data Attributes
|
|
APT38N60BC6
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
APT38N60BC6
Microchip Technology Inc
Power Field-Effect Transistor, 38A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 43 Weeks | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 796 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.099 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for APT38N60BC6
This table gives cross-reference parts and alternative options found for APT38N60BC6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT38N60BC6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPW65R080CFDAFKSA1 | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | APT38N60BC6 vs IPW65R080CFDAFKSA1 |
| IPW65R080CFD | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | APT38N60BC6 vs IPW65R080CFD |
| IXKP35N60C5 | Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Littelfuse Inc | APT38N60BC6 vs IXKP35N60C5 |
| FCH47N60F-F133 | Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 47 A, 73 mΩ, TO-247, TO-247 3L, 450-TUBE | onsemi | APT38N60BC6 vs FCH47N60F-F133 |
| NVB072N65S3 | Single N-Channel Power MOSFET SUPERFET® III, Easy Drive, 650 V , 44 A, 72 mΩ, D2PAK, 800-REEL, Automotive Qualified | onsemi | APT38N60BC6 vs NVB072N65S3 |
| IPB60R099C6 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | APT38N60BC6 vs IPB60R099C6 |
| IPW65R080CFDA | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | APT38N60BC6 vs IPW65R080CFDA |
| IPW65R080CFDFKSA1 | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | APT38N60BC6 vs IPW65R080CFDFKSA1 |
| IPB60R099C6ATMA1 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | APT38N60BC6 vs IPB60R099C6ATMA1 |
| APT38N60SC6 | Power Field-Effect Transistor, 38A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Microsemi Corporation | APT38N60BC6 vs APT38N60SC6 |