Datasheets
APT9M100B by:

Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Part Details for APT9M100B by Microchip Technology Inc

Overview of APT9M100B by Microchip Technology Inc

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Price & Stock for APT9M100B

Part # Distributor Description Stock Price Buy
DISTI # 78AH6276
Newark Mosfet Mos8 1000 V 9 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT9M100B Min Qty: 110 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $4.2100
  • 250 $4.0700
  • 500 $3.9600
$3.9600 / $4.2100 Buy Now
DISTI # APT9M100B-ND
DigiKey MOSFET N-CH 1000V 9A TO247 Min Qty: 110 Lead time: 43 Weeks Container: Tube Temporarily Out of Stock
  • 110 $3.9625
$3.9625 Buy Now
DISTI # APT9M100B
Avnet Americas Power MOS 8 MOSFET N-Channel 1000V 9A 3-Pin TO-247 - Rail/Tube (Alt: APT9M100B) RoHS: Not Compliant Min Qty: 110 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $4.8900
  • 100 $4.2100
  • 250 $4.0700
  • 500 $3.9600
$3.9600 / $4.8900 Buy Now
DISTI # 494-APT9M100B
Mouser Electronics MOSFET MOSFET MOS8 1000 V 9 A TO-247 RoHS: Compliant 0
  • 1 $4.8900
  • 100 $4.2100
$4.2100 / $4.8900 Order Now
DISTI # APT9M100B
Microchip Technology Inc MOSFET MOS8 1000 V 9 A TO-247, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $4.8900
  • 100 $4.2100
  • 250 $4.0700
  • 500 $3.9600
  • 1,000 $3.8700
  • 5,000 $3.7400
$3.7400 / $4.8900 Buy Now
Future Electronics N-Channel 1000 V 9A (Tc) 335W (Tc) Through Hole TO-247 B RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $4.5400
  • 15 $4.3600
  • 50 $4.2300
  • 150 $4.1200
  • 500 $3.8900
$3.8900 / $4.5400 Buy Now
Onlinecomponents.com Trans MOSFET N-CH Si 1KV 9A 3-Pin(3+Tab) TO-247 Tube 0
  • 5 $4.8100
  • 50 $4.4000
  • 100 $4.2200
  • 250 $4.1100
  • 500 $3.9500
  • 1,000 $3.8900
  • 2,500 $3.8300
  • 5,000 $3.7800
$3.7800 / $4.8100 Buy Now
DISTI # APT9M100B
Avnet Americas Power MOS 8 MOSFET N-Channel 1000V 9A 3-Pin TO-247 - Rail/Tube (Alt: APT9M100B) RoHS: Not Compliant Min Qty: 110 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $4.8900
  • 100 $4.2100
  • 250 $4.0700
  • 500 $3.9600
$3.9600 / $4.8900 Buy Now
DISTI # APT9M100B
TME Transistor: N-MOSFET, unipolar, 1kV, 6A, Idm: 37A, 335W, TO247-3 Min Qty: 1 4
  • 1 $7.0800
  • 3 $6.3700
  • 10 $5.6300
$5.6300 / $7.0800 Buy Now
NAC FG, MOSFET, 1000V, TO-247 RoHS: Compliant Min Qty: 78 Package Multiple: 1 Container: Tube 0
  • 1 $4.6600
  • 100 $4.2300
  • 500 $3.9600
  • 1,000 $3.8700
$3.8700 / $4.6600 Buy Now
DISTI # APT9M100B
Avnet Silica (Alt: APT9M100B) RoHS: Compliant Min Qty: 110 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT9M100B
EBV Elektronik (Alt: APT9M100B) RoHS: Compliant Min Qty: 110 Package Multiple: 1 Lead time: 44 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics Trans MOSFET N-CH Si 1KV 9A 3-Pin(3+Tab) TO-247 Tube 0
  • 5 $4.8100
  • 50 $4.4000
  • 100 $4.2200
  • 250 $4.1100
  • 500 $3.9500
  • 1,000 $3.8900
  • 2,500 $3.8300
  • 5,000 $3.7800
$3.7800 / $4.8100 Buy Now

Part Details for APT9M100B

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APT9M100B Part Data Attributes:

APT9M100B Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT9M100B Microchip Technology Inc Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 43 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 575 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 35 pF
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 335 W
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT9M100B

This table gives cross-reference parts and alternative options found for APT9M100B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT9M100B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT9M100B Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation APT9M100B vs APT9M100B
Part Number Description Manufacturer Compare
IXFV10N100PS Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN IXYS Corporation APT9M100B vs IXFV10N100PS
IXTT10N100D2 Power Field-Effect Transistor, Littelfuse Inc APT9M100B vs IXTT10N100D2
IXTT10N100D Power Field-Effect Transistor, Littelfuse Inc APT9M100B vs IXTT10N100D
APT9M100S Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT9M100B vs APT9M100S
IXTH10N100D Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation APT9M100B vs IXTH10N100D
APT9M100B Power Field-Effect Transistor, 9A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation APT9M100B vs APT9M100B
IXTH10N100D2 Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation APT9M100B vs IXTH10N100D2
IXTT10N100D2 Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation APT9M100B vs IXTT10N100D2
IXTH10N100D2 Power Field-Effect Transistor, Littelfuse Inc APT9M100B vs IXTH10N100D2
APT9F100B Power Field-Effect Transistor, 9A I(D), 1000V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation APT9M100B vs APT9F100B

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