Datasheets
ASI10637 by: Advanced Semiconductor Inc

RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, L Band, Silicon, NPN, TO-46,

Part Details for ASI10637 by Advanced Semiconductor Inc

Overview of ASI10637 by Advanced Semiconductor Inc

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Energy and Power Systems Healthcare Transportation and Logistics Renewable Energy Telecommunications Automotive

Part Details for ASI10637

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ASI10637 Part Data Attributes:

ASI10637 Advanced Semiconductor Inc
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ASI10637 Advanced Semiconductor Inc RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, L Band, Silicon, NPN, TO-46,
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.5 A
Collector-Base Capacitance-Max 5 pF
Collector-Emitter Voltage-Max 20 V
Configuration SINGLE
Highest Frequency Band L BAND
JEDEC-95 Code TO-46
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 2500 MHz

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