Datasheets
AT-42010 by:

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN

Part Details for AT-42010 by Hewlett Packard Co

Overview of AT-42010 by Hewlett Packard Co

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Applications Consumer Electronics Internet of Things (IoT) Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for AT-42010

Part # Distributor Description Stock Price Buy
Quest Components   1
  • 1 $79.7810
$79.7810 Buy Now

Part Details for AT-42010

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AT-42010 Part Data Attributes

AT-42010 Hewlett Packard Co
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AT-42010 Hewlett Packard Co RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer HEWLETT PACKARD CO
Package Description MICROWAVE, S-CQMW-F4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE, HIGH RELIABILITY
Collector Current-Max (IC) 0.08 A
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
Highest Frequency Band C BAND
JESD-30 Code S-CQMW-F4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style MICROWAVE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.6 W
Power Dissipation-Max (Abs) 0.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form FLAT
Terminal Position QUAD
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 8000 MHz

Alternate Parts for AT-42010

This table gives cross-reference parts and alternative options found for AT-42010. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AT-42010, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AT-42010 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, HERMETIC SEALED, CERAMIC, MICROSTRIP PACKAGE-4 Avago Technologies AT-42010 vs AT-42010
AT-42010 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, MICROSTRIP PACKAGE-4 Broadcom Limited AT-42010 vs AT-42010
AT-42010 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN, HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4 Agilent Technologies Inc AT-42010 vs AT-42010
Part Number Description Manufacturer Compare
AT-42010 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN, HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4 Agilent Technologies Inc AT-42010 vs AT-42010
AT-42010 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, HERMETIC SEALED, CERAMIC, MICROSTRIP PACKAGE-4 Avago Technologies AT-42010 vs AT-42010

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