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Power Field-Effect Transistor, 6.6A I(D), 250V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-AUIRF7799L2TRCT-ND
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DigiKey | MOSFET N-CH 250V 375A DIRECTFET Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$3.9474 / $7.4300 | Buy Now |
DISTI #
AUIRF7799L2TR
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Avnet Americas | Trans MOSFET N-CH 250V 6.6A 15-Pin Direct-FET L8 T/R - Tape and Reel (Alt: AUIRF7799L2TR) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$4.7889 | Buy Now |
DISTI #
942-AUIRF7799L2TR
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Mouser Electronics | MOSFET DirectFET 2 250V 35A 38mOhm Automotive RoHS: Compliant | 2889 |
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$3.8700 / $7.4300 | Buy Now |
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Future Electronics | MOSFET DirectFET 2 250V 35A 38mOhm Automotive RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$3.8000 | Buy Now |
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Rochester Electronics | AUIRF7799L2 - 120V-300V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 1800 |
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$3.8300 / $4.5100 | Buy Now |
DISTI #
AUIRF7799L2TR
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Avnet Americas | Trans MOSFET N-CH 250V 6.6A 15-Pin Direct-FET L8 T/R - Tape and Reel (Alt: AUIRF7799L2TR) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$4.7889 | Buy Now |
DISTI #
SP001522796
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EBV Elektronik | Trans MOSFET N-CH 250V 6.6A 15-Pin Direct-FET L8 T/R (Alt: SP001522796) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 1 Weeks, 6 Days | EBV - 0 |
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Buy Now |
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AUIRF7799L2TR
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRF7799L2TR
Infineon Technologies AG
Power Field-Effect Transistor, 6.6A I(D), 250V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 325 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 6.6 A | |
Drain-source On Resistance-Max | 0.038 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N9 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 9 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for AUIRF7799L2TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF7799L2TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRF7799L2TR1 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | International Rectifier | AUIRF7799L2TR vs AUIRF7799L2TR1 |
AUIRF7799L2TR | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | International Rectifier | AUIRF7799L2TR vs AUIRF7799L2TR |
IRF7799L2TRPBF | Power Field-Effect Transistor, 6.6A I(D), 250V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | Infineon Technologies AG | AUIRF7799L2TR vs IRF7799L2TRPBF |
IRF7799L2TRPBF | Power Field-Effect Transistor, 6.6A I(D), 250V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9 | International Rectifier | AUIRF7799L2TR vs IRF7799L2TRPBF |