Datasheets
AUIRFL024N by:

Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

Part Details for AUIRFL024N by International Rectifier

Overview of AUIRFL024N by International Rectifier

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Applications Internet of Things (IoT) Environmental Monitoring Space Technology Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Energy and Power Systems Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Automotive Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Aerospace and Defense Healthcare Renewable Energy Electronic Manufacturing Communication and Networking Robotics and Drones

Price & Stock for AUIRFL024N

Part # Distributor Description Stock Price Buy
ComSIT USA HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA RoHS: Not Compliant Europe - 1120
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Part Details for AUIRFL024N

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AUIRFL024N Part Data Attributes

AUIRFL024N International Rectifier
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AUIRFL024N International Rectifier Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-261AA
Package Description ROHS COMPLIANT PACKAGE-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 0.0028 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRFL024N

This table gives cross-reference parts and alternative options found for AUIRFL024N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFL024N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL024N Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Infineon Technologies AG AUIRFL024N vs IRFL024N
IRFL024NTRPBF Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier AUIRFL024N vs IRFL024NTRPBF
IRFL024NPBF Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier AUIRFL024N vs IRFL024NPBF
IRFL024NPBF Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 Infineon Technologies AG AUIRFL024N vs IRFL024NPBF
Part Number Description Manufacturer Compare
IRFL024NPBF Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 Infineon Technologies AG AUIRFL024N vs IRFL024NPBF
IRFL024NTRPBF Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier AUIRFL024N vs IRFL024NTRPBF
IRFL024NPBF Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier AUIRFL024N vs IRFL024NPBF
IRFL024N Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Infineon Technologies AG AUIRFL024N vs IRFL024N

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