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Transistors / Power Bipolar Transistors / BD139
Datasheets
BD139 by:

NPN SILICON TRANSISTORS

Part Details for BD139 by STMicroelectronics

Results Overview of BD139 by STMicroelectronics

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BD139 Information

BD139 by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BD139

Part # Distributor Description Stock Price Buy
DISTI # 33X4079
Newark Trans, Npn, 80V, 1.5A, To-126, Transistor Polarity:Npn, Collector Emitter Voltage Max:80V, Continuous Collector Current:1.5A, Power Dissipation:1.25W, Transistor Mounting:Through Hole, No. Of Pins:3Pins, Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics BD139 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Bulk 24882
  • 1 $0.4100
  • 10 $0.3260
  • 100 $0.2410
  • 500 $0.1880
  • 1,000 $0.1520
  • 2,500 $0.1360
  • 10,000 $0.1200
$0.1200 / $0.4100 Buy Now
DISTI # BD139
Avnet Americas Trans GP BJT NPN 80V 1.5A 3-Pin(3+Tab) SOT-32 Tube - Rail/Tube (Alt: BD139) RoHS: Compliant Min Qty: 6000 Package Multiple: 2000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 6,000 $0.1168
  • 10,000 $0.1085
  • 16,000 $0.1080
  • 30,000 $0.1075
  • 60,000 $0.1069
$0.1069 / $0.1168 Buy Now
STMicroelectronics NPN SILICON TRANSISTORS RoHS: Compliant Min Qty: 1 3487
  • 1 $0.5500
  • 10 $0.2700
  • 100 $0.2400
  • 500 $0.1900
$0.1900 / $0.5500 Buy Now
DISTI # BD139-ST
TME Transistor: NPN, bipolar, 80V, 1.5A, 12.5W, SOT32 Min Qty: 1 6559
  • 1 $0.3590
  • 10 $0.2970
  • 50 $0.2420
  • 100 $0.2190
  • 250 $0.1900
  • 500 $0.1700
  • 1,000 $0.1510
  • 2,000 $0.1350
  • 10,000 $0.1260
$0.1260 / $0.3590 Buy Now
DISTI # BD139
Avnet Silica Trans GP BJT NPN 80V 1.5A 3-Pin(3+Tab) SOT-32 Tube (Alt: BD139) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Silica - 39550
Buy Now
CHIPMALL.COM LIMITED 80V 1.25W 63@150mA,2V 1.5A NPN TO-126 Bipolar BJT ROHS 15407
  • 5 $0.1708
  • 50 $0.1360
  • 150 $0.1211
  • 500 $0.1025
  • 2,500 $0.0943
  • 5,000 $0.0894
$0.0894 / $0.1708 Buy Now
DISTI # BD139
EBV Elektronik Trans GP BJT NPN 80V 1.5A 3-Pin(3+Tab) SOT-32 Tube (Alt: BD139) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 4450
Buy Now
LCSC 80V 1.25W 63150mA2V 1.5A NPN TO-126 Bipolar (BJT) ROHS 15932
  • 5 $0.1691
  • 50 $0.1347
  • 150 $0.1199
  • 500 $0.1015
  • 2,500 $0.0933
  • 5,000 $0.0885
$0.0885 / $0.1691 Buy Now
Win Source Electronics TRANS NPN 80V 1.5A SOT-32 / Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 Tube 70000
  • 385 $0.1304
  • 820 $0.1220
  • 1,275 $0.1178
  • 1,830 $0.1094
  • 2,380 $0.1052
  • 2,975 $0.1010
$0.1010 / $0.1304 Buy Now

Part Details for BD139

BD139 CAD Models

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BD139 Part Data Attributes

Parametric Data
BD139 STMicroelectronics
Buy Now Datasheet
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BD139 STMicroelectronics NPN SILICON TRANSISTORS
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SIP
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection ISOLATED
Collector Current-Max (IC) 1.5 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 25
JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 12.5 W
Power Dissipation-Max (Abs) 8 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.5 V

Alternate Parts for BD139

This table gives cross-reference parts and alternative options found for BD139. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BD139, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BD139 Motorola Mobility LLC Check for Price 1.5A, 80V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-08, 3 PIN BD139 vs BD139
BD139 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN BD139 vs BD139
BD139 Rochester Electronics LLC Check for Price 1.5A, 80V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN BD139 vs BD139
Part Number Manufacturer Composite Price Description Compare
BD139 Crimson Semiconductor Inc Check for Price Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, BD139 vs BD139
BD139 Continental Device India Ltd Check for Price Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, BD139 vs BD139
BD139 onsemi Check for Price 1.5 A, 80 V NPN Power Bipolar Junction Transistor, TO-225, 500-BLKBX BD139 vs BD139
BD139G onsemi $0.3190 1.5 A, 80 V NPN Power Bipolar Junction Transistor, TO-225, 500-BLKBX BD139 vs BD139G
BD139 Samsung Semiconductor Check for Price Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin BD139 vs BD139
BD139 KEC Check for Price Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN BD139 vs BD139
BD139G-16-T60-K Unisonic Technologies Co Ltd Check for Price Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, HALOGEN FREE PACKAGE-3 BD139 vs BD139G-16-T60-K
BD139-BP Micro Commercial Components Check for Price Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 BD139 vs BD139-BP

BD139 Related Parts

BD139 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) of the BD139 is not explicitly stated in the datasheet. However, it can be estimated based on the transistor's thermal resistance, maximum junction temperature, and power dissipation. As a general rule, it's recommended to operate the transistor within 70-80% of its maximum ratings to ensure reliability.

  • To ensure the BD139 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is around 0.7V, and the collector-emitter voltage (VCE) is at least 1V. Additionally, the base current should be limited to prevent saturation, and the collector current should be within the recommended range.

  • The maximum switching frequency of the BD139 is not explicitly stated in the datasheet. However, based on its transition frequency (fT) of 30MHz, it's recommended to limit the switching frequency to around 1-5MHz to ensure reliable operation.

  • While the BD139 can handle high currents, it's not recommended to use it as a switch in high-current applications due to its limited power dissipation and thermal resistance. Instead, consider using a transistor with a higher power rating, such as the BD237 or TIP120.

  • To protect the BD139 from overheating, ensure good heat sinking, use a heat sink with a thermal resistance of around 10°C/W, and keep the transistor away from other heat sources. Additionally, monitor the transistor's temperature and reduce the power dissipation if it exceeds 80°C.

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