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Transistors / Power Bipolar Transistors / BD237
Datasheets
BD237 by:

COMPLEMENTARY SILICON POWER TRANSISTORS

Part Details for BD237 by STMicroelectronics

Results Overview of BD237 by STMicroelectronics

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BD237 Information

BD237 by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BD237

Part # Distributor Description Stock Price Buy
DISTI # 33X4081
Newark Bipolar (Bjt) Single Transistor, Npn, 80 V, 3 Mhz, 25 W, 2 A, 40 Rohs Compliant: Yes |Stmicroelectronics BD237 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Bulk 2040
  • 1 $0.5800
  • 10 $0.4640
  • 100 $0.3480
  • 500 $0.2910
  • 1,000 $0.2470
  • 2,500 $0.2200
  • 10,000 $0.1930
$0.1930 / $0.5800 Buy Now
DISTI # BD237
Avnet Americas Single Bipolar Transistor, NPN, 80 V, 2 A, 25 W, SOT-32 (TO-126), 3 Pins, Through Hole - Rail/Tube (Alt: BD237) RoHS: Compliant Min Qty: 4000 Package Multiple: 2000 Lead time: 14 Weeks, 0 Days Container: Tube 0
  • 4,000 $0.1790
  • 8,000 $0.1763
  • 12,000 $0.1735
  • 20,000 $0.1708
  • 40,000 $0.1687
$0.1687 / $0.1790 Buy Now
STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS RoHS: Compliant Min Qty: 1 5849
  • 1 $0.7800
  • 10 $0.4000
  • 100 $0.3500
  • 500 $0.2800
$0.2800 / $0.7800 Buy Now
DISTI # BD237-ST
TME Transistor: NPN, bipolar, 100V, 2A, 25W, SOT32 Min Qty: 1 2191
  • 1 $0.5360
  • 10 $0.4430
  • 50 $0.3730
  • 100 $0.3270
  • 250 $0.2920
  • 500 $0.2450
  • 1,000 $0.2210
  • 2,000 $0.1940
  • 10,000 $0.1730
$0.1730 / $0.5360 Buy Now
ComSIT USA LOW VOLTAGE NPN POWER TRANSISTOR Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin RoHS: Compliant Stock DE - 9600
Stock ES - 1431
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # BD237
Avnet Silica Single Bipolar Transistor, NPN, 80 V, 2 A, 25 W, SOT-32 (TO-126), 3 Pins, Through Hole (Alt: BD237) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Silica - 33600
Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 3763
RFQ
DISTI # BD237
EBV Elektronik Single Bipolar Transistor, NPN, 80 V, 2 A, 25 W, SOT-32 (TO-126), 3 Pins, Through Hole (Alt: BD237) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 15 Weeks, 0 Days EBV - 2400
Buy Now

Part Details for BD237

BD237 CAD Models

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BD237 Part Data Attributes

Parametric Data
BD237 STMicroelectronics
Buy Now Datasheet
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BD237 STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SIP
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 14 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection ISOLATED
Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 25
JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 25 W
Power Dissipation-Max (Abs) 25 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3 MHz
VCEsat-Max 0.6 V

Alternate Parts for BD237

This table gives cross-reference parts and alternative options found for BD237. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BD237, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BD237 Fairchild Semiconductor Corporation Check for Price Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin BD237 vs BD237
Part Number Manufacturer Composite Price Description Compare
BD237 Continental Device India Ltd Check for Price Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 BD237 vs BD237
BD237STU Fairchild Semiconductor Corporation Check for Price NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL BD237 vs BD237STU
BD237 Crimson Semiconductor Inc Check for Price Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, BD237 vs BD237
BD237 Central Semiconductor Corp Check for Price Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, BD237 vs BD237
BD237LEADFREE Central Semiconductor Corp Check for Price Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, BD237 vs BD237LEADFREE

BD237 Related Parts

BD237 Frequently Asked Questions (FAQ)

  • The maximum SOA for the BD237 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.

  • To ensure the BD237 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is around 0.7V, and the collector-emitter voltage (VCE) is at least 1V. Additionally, the base current should be limited to prevent saturation, and the collector current should be within the recommended range.

  • The recommended heatsink for the BD237 depends on the specific application and power dissipation requirements. However, as a general rule, a heatsink with a thermal resistance of around 10-20°C/W is recommended. You can use a standard TO-220 heatsink or a custom-designed heatsink depending on your specific requirements.

  • Yes, the BD237 can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (VCE(sat)). The BD237 is primarily designed for linear amplifier applications, and using it as a switch may result in reduced performance and reliability.

  • To protect the BD237 from ESD, you should handle the device by the body, avoid touching the pins, and use an anti-static wrist strap or mat. Additionally, you can use ESD protection devices such as TVS diodes or ESD protection arrays in your circuit design.

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