Datasheets
BF775E6327 by:

RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

Part Details for BF775E6327 by Infineon Technologies AG

Overview of BF775E6327 by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for BF775E6327

Part # Distributor Description Stock Price Buy
Sense Electronic Company Limited SOT-23 39000
RFQ

Part Details for BF775E6327

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BF775E6327 Part Data Attributes:

BF775E6327 Infineon Technologies AG
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BF775E6327 Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 0.03 A
Collector-Base Capacitance-Max 0.6 pF
Collector-Emitter Voltage-Max 15 V
Configuration SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 5000 MHz

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