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BFG196 by:

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN

Part Details for BFG196 by Siemens

Overview of BFG196 by Siemens

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Applications Telecommunications

Price & Stock for BFG196

Part # Distributor Description Stock Price Buy
Chip 1 Exchange INSTOCK 1000
RFQ

Part Details for BFG196

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BFG196 Part Data Attributes:

BFG196 Siemens
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BFG196 Siemens RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 0.1 A
Collector-Base Capacitance-Max 1.4 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE
Highest Frequency Band L BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 7500 MHz

Alternate Parts for BFG196

This table gives cross-reference parts and alternative options found for BFG196. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFG196, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BFG196 RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4 Infineon Technologies AG BFG196 vs BFG196
Part Number Description Manufacturer Compare
BFP183 RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, PACKAGE-4 Infineon Technologies AG BFG196 vs BFP183
MMBTH10-4LT1G NPN Bipolar Transistor hFE 120 to 240; fT ≥ 800 MHz, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi BFG196 vs MMBTH10-4LT1G
BF240ZL1 Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 Motorola Mobility LLC BFG196 vs BF240ZL1
2SC3268 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-5K1A, 3 PIN, BIP RF Small Signal Toshiba America Electronic Components BFG196 vs 2SC3268
2SC3793 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-3 Hitachi Ltd BFG196 vs 2SC3793
MMBTH10LT1 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB Motorola Mobility LLC BFG196 vs MMBTH10LT1
2SC5437 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3 Renesas Electronics Corporation BFG196 vs 2SC5437
BFR183 RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG BFG196 vs BFR183
2N6679 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR Motorola Mobility LLC BFG196 vs 2N6679
BFR193W RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN Siemens BFG196 vs BFR193W

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