Datasheets
BFG35,115 by: NXP Semiconductors

BFG35 - NPN 4 GHz wideband transistor SC-73 4-Pin

Part Details for BFG35,115 by NXP Semiconductors

Overview of BFG35,115 by NXP Semiconductors

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Applications Consumer Electronics Space Technology Audio and Video Systems Aerospace and Defense Telecommunications

Price & Stock for BFG35,115

Part # Distributor Description Stock Price Buy
DISTI # 70R2512
Newark Rf Wideband Transistor, Npn, 18V, 4Ghz, 3-Sot-223, Full Reel, Transistor Polarity:Npn, Collector Emitter Voltage Max:18V, Transition Frequency:4Ghz, Power Dissipation:1W, Continuous Collector Current:150Ma, No. Of Pins:3Pins, Msl:- Rohs Compliant: Yes |Nxp BFG35,115 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 1758045
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $1.2916
$1.2916 Buy Now
DISTI # 1758045RL
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Reel 0
  • 1 $1.2916
$1.2916 Buy Now
DISTI # 1758045RL
Farnell TRANS NPN 10V 150MA SOT223 RoHS: Compliant Min Qty: 10 Lead time: 50 Weeks, 0 Days Container: Reel 0
  • 10 $0.9803
  • 100 $0.7430
$0.7430 / $0.9803 Buy Now
DISTI # 1758045
Farnell TRANS NPN 10V 150MA SOT223 RoHS: Compliant Min Qty: 1 Lead time: 50 Weeks, 0 Days Container: Cut Tape 0
  • 1 $1.2988
  • 10 $0.9803
  • 100 $0.7430
$0.7430 / $1.2988 Buy Now

Part Details for BFG35,115

BFG35,115 CAD Models

BFG35,115 Part Data Attributes

BFG35,115 NXP Semiconductors
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BFG35,115 NXP Semiconductors BFG35 - NPN 4 GHz wideband transistor SC-73 4-Pin
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SC-73
Package Description PLASTIC, SOT-223, 4 PIN
Pin Count 4
Manufacturer Package Code SOT223
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Date Of Intro 1992-11-01
Samacsys Manufacturer NXP
Case Connection COLLECTOR
Collector Current-Max (IC) 0.15 A
Collector-Emitter Voltage-Max 18 V
Configuration SINGLE
DC Current Gain-Min (hFE) 25
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Reference Standard CECC
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4000 MHz

Alternate Parts for BFG35,115

This table gives cross-reference parts and alternative options found for BFG35,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFG35,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BFG35T/R TRANSISTOR S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal NXP Semiconductors BFG35,115 vs BFG35T/R
933919910115 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal NXP Semiconductors BFG35,115 vs 933919910115
BFG35 RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN YAGEO Corporation BFG35,115 vs BFG35
BFG35TRL13 RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN YAGEO Corporation BFG35,115 vs BFG35TRL13
BFG35TRL RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN YAGEO Corporation BFG35,115 vs BFG35TRL
BFG35-TAPE-7 TRANSISTOR S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal NXP Semiconductors BFG35,115 vs BFG35-TAPE-7
Part Number Description Manufacturer Compare
2SC4868 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236, CP, 3 PIN SANYO Electric Co Ltd BFG35,115 vs 2SC4868
2SC4393 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP RF Small Signal Toshiba America Electronic Components BFG35,115 vs 2SC4393
2SC5338-T1SH-A RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-4 NEC Electronics Group BFG35,115 vs 2SC5338-T1SH-A
2N3662 RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Silicon, NPN, TO-92, Crimson Semiconductor Inc BFG35,115 vs 2N3662
2SC4703-SH RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, PLASTIC PACKAGE-3 NEC Electronics Group BFG35,115 vs 2SC4703-SH
MRF571 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, Motorola Semiconductor Products BFG35,115 vs MRF571
MRF8372R2 RF Small Signal Bipolar Transistor, 0.2A I(C), Ultra High Frequency Band, Silicon, NPN, SO-8 Microsemi Corporation BFG35,115 vs MRF8372R2
2SC3357-RF RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3 NEC Electronics Group BFG35,115 vs 2SC3357-RF
2SC3357-T1RH-A RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3 NEC Electronics Group BFG35,115 vs 2SC3357-T1RH-A
933919910115 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal NXP Semiconductors BFG35,115 vs 933919910115

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