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RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, C Band, Silicon Germanium, NPN, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4
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BFP650
Infineon Technologies AG
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BFP650
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, C Band, Silicon Germanium, NPN, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY, LOW NOISE | |
Case Connection | EMITTER | |
Collector Current-Max (IC) | 0.15 A | |
Collector-Base Capacitance-Max | 0.4 pF | |
Collector-Emitter Voltage-Max | 4 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 100 | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON GERMANIUM | |
Transition Frequency-Nom (fT) | 37000 MHz |