Datasheets
BFS505,115 by: NXP Semiconductors

BFS505 - NPN 9 GHz wideband transistor SC-70 3-Pin

Part Details for BFS505,115 by NXP Semiconductors

Overview of BFS505,115 by NXP Semiconductors

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Applications Space Technology Industrial Automation Aerospace and Defense Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Price & Stock for BFS505,115

Part # Distributor Description Stock Price Buy
DISTI # BFS505,115
Avnet Americas Trans GP BJT NPN 15V 0.018A 3-Pin SC-70 T/R - Tape and Reel (Alt: BFS505,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
RFQ
DISTI # BFS505,115
Avnet Americas Trans GP BJT NPN 15V 0.018A 3-Pin SC-70 T/R - Tape and Reel (Alt: BFS505,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
RFQ
DISTI # BFS505,115
EBV Elektronik Trans GP BJT NPN 15V 0.018A 3-Pin SC-70 T/R (Alt: BFS505,115) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 7 Weeks, 5 Days EBV - 0
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Part Details for BFS505,115

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BFS505,115 Part Data Attributes:

BFS505,115 NXP Semiconductors
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BFS505,115 NXP Semiconductors BFS505 - NPN 9 GHz wideband transistor SC-70 3-Pin
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SC-70
Package Description PLASTIC, UMT3, SC-70, CMPAK-3
Pin Count 3
Manufacturer Package Code SOT323
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE, HIGH RELIABILITY
Collector Current-Max (IC) 0.018 A
Configuration SINGLE
DC Current Gain-Min (hFE) 60
Highest Frequency Band L BAND
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.15 W
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 9000 MHz

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