Datasheets
BLA6H1011-600,112 by:

RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4

Part Details for BLA6H1011-600,112 by Ampleon

Overview of BLA6H1011-600,112 by Ampleon

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Applications Computing and Data Storage Energy and Power Systems Renewable Energy Electronic Manufacturing Automotive

Price & Stock for BLA6H1011-600,112

Part # Distributor Description Stock Price Buy
DISTI # 2156-BLA6H1011-600,112-1603-ND
DigiKey RF MOSFET LDMOS 48V SOT539A Min Qty: 1 Lead time: 16 Weeks Container: Bulk MARKETPLACE PRODUCT 8
In Stock
  • 1 $634.9200
$634.9200 Buy Now
DISTI # 1603-1000-ND
DigiKey RF MOSFET LDMOS 48V SOT539A Min Qty: 1 Lead time: 16 Weeks Container: Tray Limited Supply - Call
  • 60 $568.2632
$568.2632 Buy Now
Rochester Electronics BLA6H1011-600 - LDMOS Avionics RF Power Transistor RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 8
  • 1 $641.0300
  • 25 $628.2000
  • 100 $602.5600
  • 500 $576.9200
  • 1,000 $544.8700
$544.8700 / $641.0300 Buy Now
Chip1Cloud RF FET LDMOS 100V 17DB SOT539A / Trans RF MOSFET N-CH 100V 72A 5-Pin SOT-539A Bulk 1050
RFQ

Part Details for BLA6H1011-600,112

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BLA6H1011-600,112 Part Data Attributes:

BLA6H1011-600,112 Ampleon
Buy Now Datasheet
Compare Parts:
BLA6H1011-600,112 Ampleon RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-4
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 72 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F4
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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