Part Details for BLF177,112 by NXP Semiconductors
Overview of BLF177,112 by NXP Semiconductors
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Robotics and Drones
Price & Stock for BLF177,112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70R2752
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Newark | Hf/Vhf Power Mosfet, N Channel, 125V, 16A, Sot-121B, Drain Source Voltage Vds:125V, Continuous Drain Current Id:16A, Power Dissipation:220W, Operating Frequency Min:-, Operating Frequency Max:-, No. Of Pins:4Pins, Product Range:- Rohs Compliant: Yes |Nxp BLF177,112 Min Qty: 40 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for BLF177,112
BLF177,112 CAD Models
BLF177,112 Part Data Attributes
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BLF177,112
NXP Semiconductors
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Datasheet
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BLF177,112
NXP Semiconductors
BLF177
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | CERAMIC PACKAGE-4 | |
| Pin Count | 2 | |
| Manufacturer Package Code | SOT121B | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Samacsys Manufacturer | NXP | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 125 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | O-CRFM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 220 W | |
| Power Dissipation-Max (Abs) | 220 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | RADIAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for BLF177,112
This table gives cross-reference parts and alternative options found for BLF177,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF177,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HFT150-50 | RF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.500 INCH, FM-4 | Advanced Semiconductor Inc | BLF177,112 vs HFT150-50 |
| BLF177 | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power | NXP Semiconductors | BLF177,112 vs BLF177 |
| MRF150 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN | Motorola Mobility LLC | BLF177,112 vs MRF150 |
| MRF150 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN | TE Connectivity | BLF177,112 vs MRF150 |
| MRF150 | RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.500 INCH, FM-4 | Advanced Semiconductor Inc | BLF177,112 vs MRF150 |
| MRF150 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-11, 4 PIN | MACOM | BLF177,112 vs MRF150 |