Part Details for BLF7G10LS-250,118 by Ampleon
Overview of BLF7G10LS-250,118 by Ampleon
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BLF7G10LS-250,118
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Rochester Electronics | BLF7G10LS-250 - LDMOS Power Transistor RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 1200 |
|
$83.4400 / $98.1600 | Buy Now |
Part Details for BLF7G10LS-250,118
BLF7G10LS-250,118 CAD Models
BLF7G10LS-250,118 Part Data Attributes
|
|
BLF7G10LS-250,118
Ampleon
Buy Now
Datasheet
|
Compare Parts:
BLF7G10LS-250,118
Ampleon
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Ampleon USA Inc. | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFP-F2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |