Part Details for BLF888AS,112 by Ampleon
Overview of BLF888AS,112 by Ampleon
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BLF888AS,112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BLF888AS,112-ND
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DigiKey | RF MOSFET LDMOS 50V SOT539B Min Qty: 60 Lead time: 16 Weeks Container: Tray | Temporarily Out of Stock |
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$208.8965 | Buy Now |
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DISTI #
BLF888AS,112
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Avnet Americas | Transistor RF FET N-CH 110V 470MHz to 860MHz 5-Pin SOT-539B Bulk - Rail/Tube (Alt: BLF888AS,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$205.2732 / $239.4854 | Buy Now |
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DISTI #
BLF888AS,112
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Avnet Americas | Transistor RF FET N-CH 110V 470MHz to 860MHz 5-Pin SOT-539B Bulk - Rail/Tube (Alt: BLF888AS,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$205.2732 / $239.4854 | Buy Now |
|
DISTI #
BLF888AS,112
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Avnet Asia | Transistor RF FET N-CH 110V 470MHz to 860MHz 5-Pin SOT-539B Bulk (Alt: BLF888AS,112) RoHS: Compliant Min Qty: 60 Package Multiple: 20 Lead time: 16 Weeks, 0 Days | 0 |
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RFQ | |
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Chip1Cloud | RF FET LDMOS 110V 21DB SOT539B / Trans RF MOSFET N-CH 110V 5-Pin SOT-539B Bulk | 850 |
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RFQ | |
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Flip Electronics | Stock | 59 |
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RFQ |
Part Details for BLF888AS,112
BLF888AS,112 CAD Models
BLF888AS,112 Part Data Attributes:
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BLF888AS,112
Ampleon
Buy Now
Datasheet
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Compare Parts:
BLF888AS,112
Ampleon
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Ampleon USA Inc. | |
| Case Connection | SOURCE | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 110 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFP-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |