Part Details for BLF8G24LS-100GVQ by Ampleon
Overview of BLF8G24LS-100GVQ by Ampleon
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BLF8G24LS-100GVQ
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BLF8G24LS-100GVQ
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Avnet Americas | Power LDMOS Transistor N-Channel 65V 6-Pin CDFM Rail - Rail/Tube (Alt: BLF8G24LS-100GVQ) RoHS: Compliant Min Qty: 7 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 91 Partner Stock |
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$46.7800 / $57.7800 | Buy Now |
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Rochester Electronics | BLF8G24LS-100GV - Power LDMOS transistor RoHS: Compliant Status: Obsolete Min Qty: 1 | 91 |
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$49.1100 / $57.7800 | Buy Now |
Part Details for BLF8G24LS-100GVQ
BLF8G24LS-100GVQ CAD Models
BLF8G24LS-100GVQ Part Data Attributes
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BLF8G24LS-100GVQ
Ampleon
Buy Now
Datasheet
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Compare Parts:
BLF8G24LS-100GVQ
Ampleon
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Ampleon USA Inc. | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-CDSO-G6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |