Datasheets
BLL6G1214L-250,112 by:

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Part Details for BLL6G1214L-250,112 by Ampleon

Overview of BLL6G1214L-250,112 by Ampleon

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Applications Telecommunications

Price & Stock for BLL6G1214L-250,112

Part # Distributor Description Stock Price Buy
DISTI # BLL6G1214L-250,112
Avnet Americas Transistor RF FET N-CH 89V 1200MHz to 1400MHz 3-Pin SOT-502A Bulk - Rail/Tube (Alt: BLL6G1214L-250,112) RoHS: Compliant Min Qty: 20 Package Multiple: 20 Container: Tube 0
RFQ
DISTI # BLL6G1214L-250,112
Avnet Americas Transistor RF FET N-CH 89V 1200MHz to 1400MHz 3-Pin SOT-502A Bulk - Rail/Tube (Alt: BLL6G1214L-250,112) RoHS: Compliant Min Qty: 20 Package Multiple: 20 Container: Tube 0
RFQ
DISTI # BLL6G1214L-250,112
Avnet Americas Transistor RF FET N-CH 89V 1200MHz to 1400MHz 3-Pin SOT-502A Bulk - Rail/Tube (Alt: BLL6G1214L-250,112) RoHS: Compliant Min Qty: 20 Package Multiple: 20 Container: Tube 0
RFQ

Part Details for BLL6G1214L-250,112

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BLL6G1214L-250,112 Part Data Attributes

BLL6G1214L-250,112 Ampleon
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BLL6G1214L-250,112 Ampleon RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Ampleon USA Inc.
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 91.5 V
Drain Current-Max (ID) 59 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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