Part Details for BLL6H1214L-250,112 by Ampleon
Overview of BLL6H1214L-250,112 by Ampleon
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- Part Data Attributes
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Part Details for BLL6H1214L-250,112
BLL6H1214L-250,112 CAD Models
BLL6H1214L-250,112 Part Data Attributes
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BLL6H1214L-250,112
Ampleon
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Datasheet
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BLL6H1214L-250,112
Ampleon
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 42 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for BLL6H1214L-250,112
This table gives cross-reference parts and alternative options found for BLL6H1214L-250,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLL6H1214L-250,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BLL8H1214L-250 | RF Power Field-Effect Transistor, | Ampleon | BLL6H1214L-250,112 vs BLL8H1214L-250 |
934064446112 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET | NXP Semiconductors | BLL6H1214L-250,112 vs 934064446112 |