Datasheets
BLL6H1214LS-250,11 by:

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Part Details for BLL6H1214LS-250,11 by Ampleon

Overview of BLL6H1214LS-250,11 by Ampleon

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Applications Consumer Electronics Audio and Video Systems Entertainment and Gaming Automotive

Price & Stock for BLL6H1214LS-250,11

Part # Distributor Description Stock Price Buy
Rochester Electronics BLL6H1214LS-250 - Power LDMOS transistor RoHS: Compliant Status: Obsolete Min Qty: 1 20
  • 1 $244.0000
  • 25 $239.1200
  • 100 $229.3600
  • 500 $219.6000
  • 1,000 $207.4000
$207.4000 / $244.0000 Buy Now

Part Details for BLL6H1214LS-250,11

BLL6H1214LS-250,11 CAD Models

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BLL6H1214LS-250,11 Part Data Attributes

BLL6H1214LS-250,11 Ampleon
Buy Now Datasheet
Compare Parts:
BLL6H1214LS-250,11 Ampleon RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 42 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CDFP-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BLL6H1214LS-250,11

This table gives cross-reference parts and alternative options found for BLL6H1214LS-250,11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLL6H1214LS-250,11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLL6H1214L-250 TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power NXP Semiconductors BLL6H1214LS-250,11 vs BLL6H1214L-250
BLL6H1214LS-250 TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power NXP Semiconductors BLL6H1214LS-250,11 vs BLL6H1214LS-250
934064447112 L BAND, Si, N-CHANNEL, RF POWER, MOSFET NXP Semiconductors BLL6H1214LS-250,11 vs 934064447112
BLL8H1214LS-250 RF Power Field-Effect Transistor, Ampleon BLL6H1214LS-250,11 vs BLL8H1214LS-250
Part Number Description Manufacturer Compare
BLL8H1214LS-250 RF Power Field-Effect Transistor, Ampleon BLL6H1214LS-250,11 vs BLL8H1214LS-250
934064447112 L BAND, Si, N-CHANNEL, RF POWER, MOSFET NXP Semiconductors BLL6H1214LS-250,11 vs 934064447112
934064446112 L BAND, Si, N-CHANNEL, RF POWER, MOSFET NXP Semiconductors BLL6H1214LS-250,11 vs 934064446112
BLL6H1214L-250 TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power NXP Semiconductors BLL6H1214LS-250,11 vs BLL6H1214L-250
BLL8H1214L-250 RF Power Field-Effect Transistor, Ampleon BLL6H1214LS-250,11 vs BLL8H1214L-250
BLL6H1214LS-250 TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power NXP Semiconductors BLL6H1214LS-250,11 vs BLL6H1214LS-250

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