Datasheets
BLP25M705Z by:

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 4 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12

Part Details for BLP25M705Z by Ampleon

Overview of BLP25M705Z by Ampleon

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Price & Stock for BLP25M705Z

Part # Distributor Description Stock Price Buy
Rochester Electronics BLP25M705 - Power LDMOS transistor RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 401
  • 1 $16.4600
  • 25 $16.1400
  • 100 $15.4800
  • 500 $14.8200
  • 1,000 $13.9900
$13.9900 / $16.4600 Buy Now

Part Details for BLP25M705Z

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BLP25M705Z Part Data Attributes

BLP25M705Z Ampleon
Buy Now Datasheet
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BLP25M705Z Ampleon RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 4 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description 6 X 4 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JEDEC-95 Code MO-229
JESD-30 Code R-PDSO-N12
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 12
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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