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Transistors RF Power Field-Effect Transistors BLP25M710Z

BLP25M710Z
Description: RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 4 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12

Overview of BLP25M710Z by Ampleon

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Environmental Monitoring Industrial Automation

Price & Stock for BLP25M710Z by Ampleon

Part # Manufacturer Description Stock Price Buy
DISTI # 1603-1008-1-ND
DigiKey RF MOSFET LDMOS 28V 12HVSON Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 465
In Stock
  • 1 $27.9500
  • 10 $25.7800
  • 25 $24.6216
  • 100 $22.0148
  • 250 $21.0009
  • 500 $19.9871
$19.9871 / $27.9500 Buy Now
Flip Electronics Stock, ship today 500
RFQ

CAD Models for BLP25M710Z by Ampleon
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Part Data Attributes for BLP25M710Z by Ampleon
Parametric Data

BLP25M710Z
Ampleon
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
AMPLEON NETHERLANDS B V
Package Description
SMALL OUTLINE, R-PDSO-N12
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
SOURCE
Configuration
COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min
65 V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
S BAND
JEDEC-95 Code
MO-229
JESD-30 Code
R-PDSO-N12
Number of Elements
2
Number of Terminals
12
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Reference Standard
IEC-60134
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Want to compare parts?
  1. BLP25M710Z
    Ampleon
    RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 4 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12
    VS

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