Datasheets
BLW85 by:

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4

Part Details for BLW85 by Advanced Semiconductor Inc

Overview of BLW85 by Advanced Semiconductor Inc

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Applications Consumer Electronics Space Technology Audio and Video Systems Aerospace and Defense Telecommunications

Price & Stock for BLW85

Part # Distributor Description Stock Price Buy
DISTI # 974-BLW85
Mouser Electronics RF Bipolar Transistors RF Transistor RoHS: Compliant 8
  • 1 $56.6500
  • 10 $51.5000
  • 25 $49.7800
  • 50 $48.0700
  • 100 $46.3500
$46.3500 / $56.6500 Buy Now
Bristol Electronics   74
RFQ

Part Details for BLW85

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BLW85 Part Data Attributes

BLW85 Advanced Semiconductor Inc
Buy Now Datasheet
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BLW85 Advanced Semiconductor Inc RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, O-CRFM-F4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Advanced Semiconductor, Inc.
Collector Current-Max (IC) 5 A
Collector-Base Capacitance-Max 135 pF
Collector-Emitter Voltage-Max 18 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 105 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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